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PDF IRF1607 Data sheet ( Hoja de datos )
| Número de pieza | IRF1607 | |
| Descripción | Power MOSFET(Vdss=75V/ Rds(on)=0.0075ohm/ Id=142A) | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de IRF1607 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
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PD -94158
AUTOMOTIVE MOSFET
IRF1607
Typical Applications
q 42 Volts Automotive Electrical Systems
q Electrical Power Steering (EPS)
q Integrated Starter Alternator
Benefits
q Ultra Low On-Resistance
q Dynamic dv/dt Rating
q 175°C Operating Temperature
q Fast Switching
q Repetitive Avalanche Allowed up to Tjmax
q Automotive [Q101] Qualified
Description
Specifically designed for Automotive applications, this
Stripe Planar design of HEXFET® Power MOSFETs
utilizes the lastest processing techniques to achieve
extremely low on-resistance per silicon area. Additional
features of this HEXFET power MOSFET are a 175°C
junction operating temperature, fast switching speed
and improved repetitive avalanche rating. These benefits
combine to make this design an extremely efficient and
reliable device for use in Automotive applications and a
wide variety of other applications.
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
G
HEXFET® Power MOSFET
D
VDSS = 75V
RDS(on) = 0.0075Ω
ID = 142A
S
TO-220AB
Max.
142
100
570
380
2.5
± 20
1250
See Fig.12a, 12b, 15, 16
5.2
-55 to + 175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
RθJC
RθCS
RθJA
www.irf.com
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Typ.
–––
0.50
–––
Max.
0.40
–––
62
Units
°C/W
1
9/4/01
1 page  
IRF1607
160
LIMITED BY PACKAGE
120
80
40
0
25 50 75 100 125 150 175
TC , Case Temperature ( °C)
Fig 9. Maximum Drain Current Vs.
Case Temperature
1
VDS
VGS
RG
RD
D.U.T.
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
+-VDD
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 10b. Switching Time Waveforms
D = 0.50
0.1 0.20
0.10
0.05
0.02
0.01
0.01
0.001
0.00001
SINGLE PULSE
(THERMAL RESPONSE)
PDM
t1
t2
Notes:
1. Duty factor D = t1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.0001
0.001
0.01
t1 , Rectangular Pulse Duration (sec)
0.1
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
5
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet IRF1607.PDF ] | |
Hoja de datos destacado
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| IRF1607 | Power MOSFET(Vdss=75V/ Rds(on)=0.0075ohm/ Id=142A) | International Rectifier |
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