DataSheetWiki


IRF1407L fiches techniques PDF

International Rectifier - Power MOSFET(Vdss = 75V/ Rds(on) = 0.0078/ Id = 100A)

Numéro de référence IRF1407L
Description Power MOSFET(Vdss = 75V/ Rds(on) = 0.0078/ Id = 100A)
Fabricant International Rectifier 
Logo International Rectifier 





1 Page

No Preview Available !





IRF1407L fiche technique
PD -94335
IRF1407S
Benefits
q Advanced Process Technology
q Ultra Low On-Resistance
q Dynamic dv/dt Rating
q 175°C Operating Temperature
q Fast Switching
q Repetitive Avalanche Allowed up to Tjmax
Description
Advanced HEXFET® Power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the highest
power capability and the lowest possible on-resistance in any
existing surface mount package. The D2Pak is suitable for
high current applications because of its low internal connection
resistance and can dissipate up to 2.0W in a typical surface
mount application.
The through-hole version (IRF1407L) is available for low-
profile applications.
G
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TA = 25°C
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10VX
Continuous Drain Current, VGS @ 10VX
Pulsed Drain Current QX
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche EnergyRX
Avalanche CurrentQ
Repetitive Avalanche EnergyW
Peak Diode Recovery dv/dt SX
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
Parameter
RθJC
RθJA
Junction-to-Case
Junction-to-Ambient(PCB Mounted,steady-state)**
IRF1407L
HEXFET® Power MOSFET
D
VDSS = 75V
RDS(on) = 0.0078
ID = 100AV
S
D2Pak
IRF1407S
TO-262
IRF1407L
Max.
100V
70V
520
3.8
200
1.3
± 20
390
See Fig.12a, 12b, 15, 16
4.6
-55 to + 175
300 (1.6mm from case )
Typ.
–––
–––
Max.
0.75
40
Units
A
W
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
**When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer
to application note #AN-994.
www.irf.com
1
10/05/01

PagesPages 11
Télécharger [ IRF1407L ]


Fiche technique recommandé

No Description détaillée Fabricant
IRF1407 Power MOSFET(Vdss=75V/ Rds(on)=0.0078ohm/ Id=130A) International Rectifier
International Rectifier
IRF1407L Power MOSFET(Vdss = 75V/ Rds(on) = 0.0078/ Id = 100A) International Rectifier
International Rectifier
IRF1407LPbF Power MOSFET ( Transistor ) Infineon
Infineon
IRF1407LPbF Power MOSFETs International Rectifier
International Rectifier

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche