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IRF1405L fiches techniques PDF

International Rectifier - Power MOSFET(Vdss=55V/ Rds(on)=5.3mohm/ Id=131A)

Numéro de référence IRF1405L
Description Power MOSFET(Vdss=55V/ Rds(on)=5.3mohm/ Id=131A)
Fabricant International Rectifier 
Logo International Rectifier 





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IRF1405L fiche technique
AUTOMOTIVE MOSFET
PD -93992
IRF1405S
IRF1405L
Typical Applications
q Electric Power Steering (EPS)
q Anti-lock Braking System (ABS)
q Wiper Control
q Climate Control
q Power Door
Benefits
q Advanced Process Technology
q Ultra Low On-Resistance
q Dynamic dv/dt Rating
q 175°C Operating Temperature
q Fast Switching
q Repetitive Avalanche Allowed up to Tjmax
Description
Stripe Planar design of HEXFET® Power MOSFETs
utilizes the lastest processing techniques to achieve
extremely low on-resistance per silicon area. Additional
features of this HEXFET power MOSFET are a 175°C
junction operating temperature, fast switching speed
and improved repetitive avalanche rating. These
benefits combine to make this design an extremely
efficient and reliable device for use in Automotive
applications and a wide variety of other applications.
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚
Avalanche Current
Repetitive Avalanche Energy‡
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
RθJC
RθJA
Parameter
Junction-to-Case
Junction-to-Ambient (PCB mount)ˆ
www.irf.com
G
HEXFET® Power MOSFET
D
VDSS = 55V
RDS(on) = 5.3m
ID = 131A†
S
D2Pak
IRF1405S
TO-262
IRF1405L
Max.
131†
93†
680
200
1.3
± 20
590
See Fig.12a, 12b, 15, 16
5.0
-55 to + 175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Typ.
–––
–––
Max.
0.75
40
Units
°C/W
1
1/11/01

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