IR53H420 Datasheet PDF - International Rectifier
| Part Number | IR53H420 | |
| Description | SELF-OSCILLATING HALF BRIDGE | |
| Manufacturers | International Rectifier | |
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Preliminary Data Sheet No. PD60140J
IR53H(D)420(-P2)
SELF-OSCILLATING HALF BRIDGE
Features
• Output power MOSFETs in half-bridge configuration
• High side gate drive designed for bootstrap operation
• Bootstrap diode integrated into package (HD type)
• Tighter initial deadtime control
• Low temperature coefficient deadtime
• 15.6V zener clamped Vcc for offline operation
• Half-bridge output is out of phase with RT
• True micropower startup
• Shutdown feature (1/6th VCC) on CT lead
• Increased undervoltage lockout hysteresis (1Volt)
• Lower power level-shifting circuit
• Lower di/dt gate drive for better noise immunity
• Excellent latch immunity on all inputs and outputs
• ESD protection on all leads
• Constant VO pulse width at startup
• Heatsink package version (P2 type)
Product Summary
VIN (max)
500V
Duty Cycle
Deadtime (type.)
50%
1.2µs
Rds(on)
3.0Ω
PD (TA = 25oC) 2.0W or 3.0W
Package
Description
The IR53H(D)420(-P2) are complete high voltage, high speed,
self-oscillating half-bridge circuits. Proprietary HVIC and latch
immune CMOS technologies, along with the HEXFET® power
MOSFET technology, enable ruggedized single package con-
struction. The front-end features a programmable oscillator
which functions similar to the CMOS 555 timer. The supply to
the control circuit has a zener clamp to simplify offline opera-
tion. The output features two HEXFETs in a half-bridge con-
figuration with an internally set deadtime designed for mini-
mum cross-conduction in the half-bridge. Propagation delays
Typical Connection
VIN
HV DC Bus
IR53H(D)420(-P2)
D1
COM
1 Vcc
VB 6
2
RT
9
VIN
RT
3 CT
VO 7
CT
4 COM
7 Pin Lead SIP
for the high and low side power MOSFETs
are matched to simplify use in 50% duty
cycle applications. The device can oper-
ate up to the VIN (max) rating.
External
Fast recovery diode D1 is not
required for HD type
TO,
LOAD
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IR53H(D)420(-P2)
Electrical Characteristics
VBIAS (VCC, VBS) = 12V, CT = 1 nF and TA = 25°C unless otherwise specified. The VIN, VTH and IIN parameters are
referenced to COM.
Low Voltage Supply Characteristics
Symbol Definition
VCCUV+
VCCUV-
VCCUVH
IQCCUV
IQCC
VCLAMP
Rising VCC undervoltage lockout threshold
Falling VCC undervoltage lockout threshold
VCC undervoltage lockout Hysteresis
Micropower startup VCC supply current
Quiescent VCC supply current
VCC zener clamp voltage
Floating Supply Characteristics
Min.
8.1
7.2
0.5
—
—
14.4
Typ.
9.0
8.0
1.0
75
500
15.6
Max.
9.9
8.8
1.5
150
950
16.8
Units Test Conditions
V
µA VCC ≤ VCCUV-
V ICC = 5mA
Symbol Definition
IQBSUV
IQBS
VBSMIN
IOS
VF
Micropower startup VBS supply current
Quiescent VBS supply current
Minimum required VBS voltage for proper
functionality from RT to HO
Offset supply leakage current
Bootstrap diode forward voltage (IR2153D)
Oscillator I/O Characteristics
Min.
—
—
—
Typ.
0
30
4.0
——
0.5 —
Max.
10
50
5.0
Units
µA
Test Conditions
VCC ≤ VCCUV-
V VCC=VCCUV+ + 0.1V
50 µA VB = VS = 600V
1.0 V
IF = 250mA
Symbol Definition
fosc Oscillator frequency
d
ICT
ICTUV
VCT+
VCT-
VCTSD
VRT+
RT pin duty cycle
CT pin current
UV-mode CT pin pulldown current
Upper CT ramp voltage threshold
Lower CT ramp voltage threshold
CT voltage shutdown threshold
High-level RT output voltage, VCC - VRT
VRT- Low-level RT output voltage
VRTUV UV-mode RT output voltage
VRTSD SD-Mode RT output voltage, VCC - VRT
Min.
19.4
94
48
—
0.30
—
—
1.8
—
—
—
—
—
—
—
Typ.
20
100
50
0.001
0.70
8.0
4.0
2.1
10
100
10
100
0
10
10
Max.
20.6
106
52
1.0
1.2
—
—
2.4
50
300
50
300
100
50
300
Units
kHz
%
uA
mA
Test Conditions
RT = 36.9kΩ
RT = 7.43kΩ
fo < 100kHz
VCC = 7V
V
IRT = 100µA
IRT = 1mA
IRT = 100µA
mV IRT = 1mA
VCC ≤ VCCUV-
IRT = 100µA,
VCT = 0V
IRT = 1mA,
VCT = 0V
5
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| Information | Total 8 Pages | |
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