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PDF IR2152 Data sheet ( Hoja de datos )
| Número de pieza | IR2152 | |
| Descripción | SELF-OSCILLATING HALF-BRIDGE DRIVER | |
| Fabricantes | International Rectifier | |
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Data Sheet No. PD-6.035F
IR2152
SELF-OSCILLATING HALF-BRIDGE DRIVER
Features
n Floating channel designed for bootstrap operation
Fully operational to +600V
Tolerant to negative transient voltage
dV/dt immune
n Undervoltage lockout
n Programmable oscillator frequency
f= 1
1.4 × (RT + 75Ω) × CT
n Matched propagation delay for both channels
n Low side output in phase with RT
Description
Product Summary
VOFFSET
600V max.
Duty Cycle
50%
IO+/-
100 mA / 210 mA
VOUT
10 - 20V
Deadtime (typ.)
1.2 µs
Packages
The IR2152 is a high voltage, high speed, self-os-
cillating power MOSFET and IGBT driver with both high
and low side referenced output channels. Proprietary
HVIC and latch immune CMOS technologies enable
ruggedized monolithic construction.The front end fea-
tures a programmable oscillator which is similar to the
555 timer. The output drivers feature a high pulse cur-
rent buffer stage and an internal deadtime designed for
minimum driver cross-conduction. Propagation delays
for the two channels are matched to simplify use in
50% duty cycle applications. The floating channel can
be used to drive an N-channel power MOSFET or IGBT
in the high side configuration that operates off a high
voltage rail up to 600 volts.
Typical Connection
up to 600V
V CC
RT
CT
COM
VB
HO
VS
LO
TO
LOAD
To Order
CONTROL INTEGRATED CIRCUIT DESIGNERS MANUAL B-193
1 page  
Previous Datasheet
Device Information
Process & Design Rule
Transistor Count
Die Size
Die Outline
Index
Next Data Sheet
IR2152
HVDCMOS 4.0 µm
231
68 X 101 X 26 (mil)
Thickness of Gate Oxide
Connections
First
Layer
Second
Layer
Contact Hole Dimension
Insulation Layer
Passivation
Method of Saw
Method of Die Bond
Wire Bond
Leadframe
Package
Remarks:
Material
Width
Spacing
Thickness
Material
Width
Spacing
Thickness
Material
Thickness
Material
Thickness
Method
Material
Material
Die Area
Lead Plating
Types
Materials
800Å
Poly Silicon
5 µm
6 µm
5000Å
Al - Si - Cu (Si: 1.0%, Cu: 0.5%)
6 µm
9 µm
20,000Å
5 µm X 5 µm
PSG (SiO2)
1.7 µm
PSG (SiO2)
1.7 µm
Full Cut
Ablebond 84 - 1
Thermo Sonic
Au (1.0 mil / 1.3 mil)
Cu
Ag
Pb : Sn (37 : 63)
8 Lead PDIP / SO-8
EME6300 / MP150 / MP190
To Order
CONTROL INTEGRATED CIRCUIT DESIGNERS MANUAL B-197
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet IR2152.PDF ] | |
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