IR2112 Datasheet PDF - International Rectifier
| Part Number | IR2112 | |
| Description | HIGH AND LOW SIDE DRIVER | |
| Manufacturers | International Rectifier | |
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Data Sheet No. PD-6.026C
IR2112
HIGH AND LOW SIDE DRIVER
Features
Product Summary
n Floating channel designed for bootstrap operation
Fully operational to +600V
Tolerant to negative transient voltage
dV/dt immune
n Gate drive supply range from 10 to 20V
n Undervoltage lockout for both channels
n Separate logic supply range from 5 to 20V
Logic and power ground ±5V offset
n CMOS Schmitt-triggered inputs with pull-down
n Cycle by cycle edge-triggered shutdown logic
n Matched propagation delay for both channels
n Outputs in phase with inputs
Description
VOFFSET
600V max.
IO+/-
200 mA / 420 mA
VOUT
10 - 20V
ton/off (typ.) 125 & 105 ns
Delay Matching
30 ns
Packages
The IR2112 is a high voltage, high speed power
MOSFET and IGBT driver with independent high and
low side referenced output channels. Proprietary
HVIC and latch immune CMOS technologies enable
ruggedized monolithic construction. Logic inputs are
compatible with standard CMOS or LSTTL outputs.
The output drivers feature a high pulse current buffer
stage designed for minimum driver cross-conduc-
tion. Propagation delays are matched to simplify
use in high frequency applications. The floating
channel can be used to drive an N-channel power
MOSFET or IGBT in the high side configuration
which operates up to 600 volts.
Typical Connection
up to 600V
HO
VDD
V DD
VB
HIN HIN VS
SD SD
LIN LIN VCC
VSS VSS COM
VCC LO
TO
LOAD
To Order
CONTROL INTEGRATED CIRCUIT DESIGNERS MANUAL
B-47
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Device Information
Process & Design Rule
Transistor Count
Die Size
Die Outline
Index
Next Data Sheet
IR2112
HVDCMOS 4.0 µm
220
100 X 117 X 26 (mil)
Thickness of Gate Oxide
Connections
First
Layer
Second
Layer
Contact Hole Dimension
Insulation Layer
Passivation
Method of Saw
Method of Die Bond
Wire Bond
Leadframe
Package
Remarks:
Material
Width
Spacing
Thickness
Material
Width
Spacing
Thickness
Material
Thickness
Material
Thickness
Method
Material
Material
Die Area
Lead Plating
Types
Materials
800Å
Poly Silicon
4 µm
6 µm
5000Å
Al - Si (Si: 1.0% ±0.1%)
6 µm
9 µm
20,000Å
8 µm X 8 µm
PSG (SiO2)
1.5 µm
PSG (SiO2)
1.5 µm
Full Cut
Ablebond 84 - 1
Thermo Sonic
Au (1.0 mil / 1.3 mil)
Cu
Ag
Pb : Sn (37 : 63)
14 & 16 Lead PDIP / 16 Lead SOIC
EME6300 / MP150 / MP190
To Order
CONTROL INTEGRATED CIRCUIT DESIGNERS MANUAL B-51
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for IR2112 electronic component. |
| Information | Total 14 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ IR2112.PDF Datasheet ] | |
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