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PDF IR2103 Data sheet ( Hoja de datos )
| Número de pieza | IR2103 | |
| Descripción | HALF-BRIDGE DRIVER | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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Data Sheet No. PD60045-N
IR2103(S)
HALF-BRIDGE DRIVER
Features
• Floating channel designed for bootstrap operation
Fully operational to +600V
Tolerant to negative transient voltage
dV/dt immune
• Gate drive supply range from 10 to 20V
• Undervoltage lockout
• 3.3V, 5V and 15V logic compatible
• Cross-conduction prevention logic
• Matched propagation delay for both channels
• Internal set deadtime
• High side output in phase with HIN input
• Low side output out of phase with LIN input
Product Summary
VOFFSET
600V max.
IO+/-
130 mA / 270 mA
VOUT
10 - 20V
ton/off (typ.)
680 & 150 ns
Deadtime (typ.)
520 ns
Packages
Description
The IR2103(S) are high voltage, high speed power
MOSFET and IGBT drivers with dependent high and
low side referenced output channels.Proprietary HVIC
8-Lead SOIC
and latch immune CMOS technologies enable rug-
gedized monolithic construction. The logic input is
compatible with standard CMOS or LSTTL output,
IR2103S
8-Lead PDIP
IR2103
down to 3.3V logic. The output drivers feature a high
pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to
drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600 volts.
Typical Connection
up to 600V
VCC
VCC
VB
HIN HIN HO
LIN LIN VS
COM
LO
TO
LOAD
(Refer to Lead Assignments for correct configuration). This/These diagram(s) show electrical connections only.
Please refer to our Application Notes and DesignTips for proper circuit board layout.
www.irf.com
1
1 page  
IR2103(S)
LIN
HIN
50%
50%
LIN
ton tr
toff tf
90%
90%
HO
LO LO 10% 10%
Figure 1. Input/Output Timing Diagram
HIN
50%
50%
ton tr
toff tf
90%
90%
HIN 50%
LIN
50%
HO 10% 10%
Figure 2. Switching Time Waveform Definitions
90%
HO 10%
DT
LO 90%
DT
10%
Figure 4. Deadtime Waveform Definitions
www.irf.com
5
5 Page 
11
Max .
10
TTyypp. .
9
Min .
8
7
6
-50 -25
0 25 50 75
Temperature (oC)
100 125
Figure 21A. Vcc Undervoltage Threshold(+)
vs Temperature
500
400
300 Ty p.
200
10 0 Min.
0
-50 -25
0 25 50 75
Temperature (oC)
100 125
Figure 22A. Output Source Current vs
Temperature
700
600
500 Typ.
400
300
M in .
200
100
0
-50
-25
0 25 50 75
Temperature (oC)
100 125
Figure 23A. Output Sink Current
vs Temperature
www.irf.com
IR2103(S)
11
10
Max.
9
TTyyp.p.
8
7 Min.
6
-50 -25
0 25 50 75
Temperature (oC)
100 125
Figure 21B. Vcc UndervoltageThreshold (-)
vs Temperature
500
400
300
200
Typ.
100
0
10
Min.
12 14 16
VBIAS Supply Voltage (V)
18
20
Figure 22B. Output Source Current
vs Voltage
700
600
500
400
Typ.
300
200
Min.
100
0
10
12 14 16 18
VBIAS Supply Voltage (V)
Figure 23B. Output Sink Current
vs Voltage
20
11
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet IR2103.PDF ] | |
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