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Infineon Technologies AG - OptiMOS 2 Power-Transistor

Numéro de référence IPS13N03LA
Description OptiMOS 2 Power-Transistor
Fabricant Infineon Technologies AG 
Logo Infineon Technologies AG 





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IPS13N03LA fiche technique
OptiMOS®2 Power-Transistor
Features
• Ideal for high-frequency dc/dc converters
• Qualified according to JEDEC1) for target applications
• N-channel, logic level
• Excellent gate charge x R DS(on) product (FOM)
• Superior thermal resistance
• 175 °C operating temperature
IPD13N03LA IPF13N03LA
IPS13N03LA IPU13N03LA
Product Summary
V DS
R DS(on),max
ID
25 V
12.8
30
m
A
Type
IPD13N03LA
IPF13N03LA
IPS13N03LA
IPU13N03LA
Package
Ordering Code
Marking
P-TO252-3-11
Q67042-S4159
13N03LA
P-TO252-3-23
Q67042-S4195
13N03LA
P-TO251-3-11
Q67042-S4248
13N03LA
P-TO251-3-21
Q67042-S4160
13N03LA
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I D T C=25 °C2)
T C=100 °C
Pulsed drain current
I D,pulse T C=25 °C3)
Avalanche energy, single pulse
E AS I D=24 A, R GS=25
Reverse diode dv /dt
dv /dt
I D=30 A, V DS=20 V,
di /dt =200 A/µs,
T j,max=175 °C
Gate source voltage4)
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
Value
30
30
210
60
6
±20
46
-55 ... 175
55/175/56
Unit
A
mJ
kV/µs
V
W
°C
Rev. 1.7
page 1
2004-05-24

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