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Numéro de référence | IPS0551T | ||
Description | FULLY PROTECTED POWER MOSFET SWITCH | ||
Fabricant | International Rectifier | ||
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1 Page
Data Sheet No. PD60160-A
IPS0551T
FULLY PROTECTED POWER MOSFET SWITCH
Features
• Over temperature shutdown
• Over current shutdown
• Active clamp
• Low current & logic level input
• E.S.D protection
Description
The IPS0551T is a fully protected three terminal SMART
POWER MOSFET that features over-current, over-tem-
perature, ESD protection, and drain to source active
clamp. This device combines a HEXFET® POWER
MOSFET and a gate driver. It offers full protection and
high reliability required in harsh environments. The driver
allows short switching times and provides efficient protec-
tion by turning OFF the power MOSFET when temperature
exceeds 165oC or when the drain current reaches 100A.
The device restarts once the input is cycled. The ava-
lanche capability is significantly enhanced by the active
clamp and covers most inductive load demagnetiza-
tions.
Product Summary
Rds(on)
V clamp
Ishutdown
Ton/Toff
5.2mΩ (max)
40V
100A
4µs
Package
SUPER TO220
SUPER SMD220
Advance Information
Typical Connection
Load
R in s e r ie s
( if n e e d e d )
IN
L o g ic s ig n a l
contro l
D
S
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Pages | Pages 10 | ||
Télécharger | [ IPS0551T ] |
No | Description détaillée | Fabricant |
IPS0551T | FULLY PROTECTED POWER MOSFET SWITCH | International Rectifier |
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