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PDF IPS024G Data sheet ( Hoja de datos )
| Número de pieza | IPS024G | |
| Descripción | QUAD FULLY PROTECTED POWER MOSFET SWITCH | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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Data Sheet No.PD60204
IPS024G
QUAD FULLY PROTECTED POWER MOSFET SWITCH
Features
• Over temperature shutdown
• Over current shutdown
• Active clamp
• Low current & logic level input
• E.S.D protection
Description
The IPS024G are fully protected quad low side SMART
POWER MOSFETs respectively. They feature over-
current, over-temperature, ESD protection and drain
to source active clamp.These devices combine a
HEXFET® POWER MOSFET and a gate driver. They
offer full protection and high reliability required in
harsh environments. The driver allows short switch-
ing times and provides efficient protection by turning
OFF the power MOSFET when the temperature ex-
ceeds 165oC or when the drain current reaches 5A.
These devices restart once the input is cycled. The
avalanche capability is significantly enhanced by
the active clamp and covers most inductive load
demagnetizations.
Typical Connection
Product Summary
Rds(on)
V clamp
Ishutdown
Ton/Toff
150mΩ (max)
50V
6A
1.5µs
Package
16-Lead SOIC
IPS024G
(Quad)
Load
R in series
(if needed)
IN
Q
Logic signal
control S
(Refer to lead assignment for correct pin configuration)
www.irf.com
D
S
1
1 page  
IPS024G
Vin 5 V
0V
Ids
I shutdown
Isd
t < T reset
t > T reset
T
Tsd
(165 °c)
T shutdown
90 %
Vin 10 %
Tr-in
90 %
Ids
10 %
Td on
Vds
tr
Td off
tf
Figure 1 - Timing diagram
Figure 2 - IN rise time & switching time definitions
Vin
T clamp
Ids
Vds clamp
Vds
( Vcc )
( see Appl . Notes to evaluate power dissipation )
Figure 3 - Active clamp waveforms
www.irf.com
Rem : V load is negative
during demagnetization
Vin
5v
0v
IN
L
R
D
S
V load
+
14 V
-
Vds
Ids
Figure 4 - Active clamp test circuit
5
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet IPS024G.PDF ] | |
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