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PDF IPS0151 Data sheet ( Hoja de datos )
| Número de pieza | IPS0151 | |
| Descripción | FULLY PROTECTED POWER MOSFET SWITCH | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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Data Sheet No.PD60144-K
IPS0151(S)
FULLY PROTECTED POWER MOSFET SWITCH
Features
• Over temperature shutdown
• Over current shutdown
• Active clamp
• Low current & logic level input
• E.S.D protection
Description
The IPS0151/IPS0151S are fully protected three terminal
SMART POWER MOSFETs that feature over-current,
over-temperature, ESD protection and drain to source
active clamp.These devices combine a HEXFET®
POWER MOSFET and a gate driver. They offer full
protection and high reliability required in harsh envi-
ronments. The driver allows short switching times
and provides efficient protection by turning OFF the
power MOSFET when the temperature exceeds 165oC
or when the drain current reaches 35A. The device
restarts once the input is cycled. The avalanche
capability is significantly enhanced by the active
clamp and covers most inductive load demagnetiza-
tions.
Product Summary
Rds(on)
V clamp
Ishutdown
Ton/Toff
25mΩ (max)
50V
35A
1.5µs
Packages
3-Lead D2Pak
IPS0151S
Typical Connection
3-Lead TO-220
PS0151
Load
R in series
( if need ed ) IN
control
L o g ic sig n a l
(Refer to lead assignment for correct pin configuration)
www.irf.com
D
S
1
1 page  
IPS0151(S)
Vin 5 V
0V
Ids
I shutdown
Isd
t < T reset
t > T reset
T
Tsd
(165 °c)
T shutdown
Vin 90 %
10 %
Tr-in
90 %
Ids
10 %
Td on
Vds
tr
Td off
tf
Figure 1 - Timing diagram
Figure 2 - IN rise time & switching time definitions
Vin
T clamp
Ids
Vds clamp
Vds
( Vcc )
( see Appl . Notes to evaluate power dissipation )
Figure 3 - Active clamp waveforms
www.irf.com
Rem : V load is negative
during demagnetization
Vin
5v
0v
IN
L
R
D
S
V load
+
14 V
-
Vds
Ids
Figure 4 - Active clamp test circuit
5
5 Page 
Case Outline
IPS0151(S)
www.irf.com
3-Lead D2PAK
01-6022 00
115-0088 10 (TO-263AB)
11
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet IPS0151.PDF ] | |
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