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PDF IPI14N03LA Data sheet ( Hoja de datos )
| Número de pieza | IPI14N03LA | |
| Descripción | OptiMOS 2 Power-Transistor | |
| Fabricantes | Infineon Technologies AG | |
| Logotipo |  |
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OptiMOS®2 Power-Transistor
Features
• Ideal for high-frequency dc/dc converters
• N-channel
• Logic level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
• Superior thermal resistance
P-TO263-3-2
• 175 °C operating temperature
• dv /dt rated
IPB14N03LA
IPI14N03LA, IPP14N03LA
Product Summary
V DS
R DS(on),max (SMD version)
ID
25 V
13.6 mΩ
30 A
P-TO262-3-1
P-TO220-3-1
Type
IPB14N03LA
IPI14N03LA
IPP14N03LA
Package
P-TO263-3-2
P-TO262-3-1
P-TO220-3-1
Ordering Code
Q67042-S4156
Q67042-S4157
Q67042-S4158
Marking
14N03LA
14N03LA
14N03LA
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I D T C=25 °C1)
T C=100 °C
Pulsed drain current
Avalanche energy, single pulse
I D,pulse
E AS
T C=25 °C2)
I D=24 A, R GS=25 Ω
Reverse diode dv /dt
dv /dt
I D=30 A, V DS=20 V,
di /dt =200 A/µs,
T j,max=175 °C
Gate source voltage3)
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
Value
30
30
210
60
6
±20
46
-55 ... 175
55/175/56
Unit
A
mJ
kV/µs
V
W
°C
Rev. 1.3
page 1
2003-12-18
1 page  
5 Typ. output characteristics
I D=f(V DS); T j=25 °C
parameter: V GS
60
10 V
50
40
30
20
10
0
012
V DS [V]
7 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j
60
IPB14N03LA
IPI14N03LA, IPP14N03LA
6 Typ. drain-source on resistance
R DS(on)=f(I D); T j=25 °C
parameter: V GS
4.5 V
60
3.2 V
3 V 3.5 V
3.8 V
50
4.1 V
4.5 V
40
4.1 V
30
3.8 V
3.5 V
3.2 V
3V
2.8 V
3
20
10
0
0 10 20 30 40
I D [A]
8 Typ. forward transconductance
g fs=f(I D); T j=25 °C
10 V
50 60
50
50
40
40
30
30
20
20
10
175 °C
25 °C
0
012345
V GS [V]
10
0
0 10 20 30 40 50 60
I D [A]
Rev. 1.3
page 5
2003-12-18
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet IPI14N03LA.PDF ] | |
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