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Número de pieza | IPI03N03LA | |
Descripción | OptiMOS 2 Power-Transistor | |
Fabricantes | Infineon Technologies AG | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de IPI03N03LA (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
No Preview Available ! OptiMOS®2 Power-Transistor
Features
• Ideal for high-frequency dc/dc converters
• Qualified according to JEDEC1) for target applications
• N-channel - Logic level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
• Superior thermal resistance
P-TO263-3-2
• 175 °C operating temperature
• dv /dt rated
IPB03N03LA
IPI03N03LA, IPP03N03LA
Product Summary
V DS
R DS(on),max (SMD version)
ID
25 V
2.7 mΩ
80 A
P-TO262-3-1
P-TO220-3-1
Type
IPB03N03LA
IPI03N03LA
IPP03N03LA
Package
P-TO263-3-2
P-TO262-3-1
P-TO220-3-1
Ordering Code
Q67042-S4178
Q67042-S4180
Q67042-S4179
Marking
03N03LA
03N03LA
03N03LA
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I D T C=25 °C2)
T C=100 °C
Pulsed drain current
Avalanche energy, single pulse
I D,pulse
E AS
T C=25 °C3)
I D=80 A, R GS=25 Ω
Reverse diode dv /dt
dv /dt
I D=80 A, V DS=20 V,
di /dt =200 A/µs,
T j,max=175 °C
Gate source voltage4)
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
1) J-STD20 and JESD22
Value
80
80
385
960
6
±20
150
-55 ... 175
55/175/56
Unit
A
mJ
kV/µs
V
W
°C
Rev. 1.4
page 1
2004-02-05
1 page 5 Typ. output characteristics
I D=f(V DS); T j=25 °C
parameter: V GS
160
140
10 V 4.5 V
4.1 V
120
100
80
60
40
20
0
012
V DS [V]
7 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j
160
IPB03N03LA
IPI03N03LA, IPP03N03LA
6 Typ. drain-source on resistance
R DS(on)=f(I D); T j=25 °C
parameter: V GS
12
2.8 V
3.2 V
3.5 V
3.8 V
3.8 V
10 3 V
8
3.5 V
6
3.2 V
4
4.1 V
4.5 V
3V
2.8 V
2
10 V
0
3 0 20 40 60 80 100 120 140 160
I D [A]
8 Typ. forward transconductance
g fs=f(I D); T j=25 °C
140
140
120
100
80
60
40
20
0
0
175 °C
25 °C
1234
V GS [V]
5
120
100
80
60
40
20
0
0
20 40 60
I D [A]
80
Rev. 1.4
page 5
2004-02-05
5 Page |
Páginas | Total 10 Páginas | |
PDF Descargar | [ Datasheet IPI03N03LA.PDF ] |
Número de pieza | Descripción | Fabricantes |
IPI03N03LA | OptiMOS 2 Power-Transistor | Infineon Technologies AG |
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