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Infineon Technologies AG - OptiMOS 2 Power-Transistor

Numéro de référence IPB09N03LA
Description OptiMOS 2 Power-Transistor
Fabricant Infineon Technologies AG 
Logo Infineon Technologies AG 





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IPB09N03LA fiche technique
OptiMOS®2 Power-Transistor
Features
• Ideal for high-frequency dc/dc converters
• N-channel
• Logic level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
• Superior thermal resistance
P-TO263-3-2
• 175 °C operating temperature
• dv /dt rated
IPB09N03LA
IPI09N03LA, IPP09N03LA
Product Summary
V DS
R DS(on),max (SMD version)
ID
25 V
8.9 m
50 A
P-TO262-3-1
P-TO220-3-1
Type
IPB09N03LA
IPI09N03LA
IPP09N03LA
Package
P-TO263-3-2
P-TO262-3-1
P-TO220-3-1
Ordering Code
Q67042-S4151
Q67042-S4152
Q67042-S4153
Marking
09N03LA
09N03LA
09N03LA
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I D T C=25 °C1)
T C=100 °C
Pulsed drain current
Avalanche energy, single pulse
I D,pulse
E AS
T C=25 °C2)
I D=45 A, R GS=25
Reverse diode dv /dt
dv /dt
I D=50 A, V DS=20 V,
di /dt =200 A/µs,
T j,max=175 °C
Gate source voltage3)
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
Value
50
46
350
75
6
±20
63
-55 ... 175
55/175/56
Unit
A
mJ
kV/µs
V
W
°C
Rev. 1.3
page 1
2003-12-18

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