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PDF NLAS3699MN1R2G Data sheet ( Hoja de datos )
| Número de pieza | NLAS3699MN1R2G | |
| Descripción | Dual DPDT Ultra-Low RON Switch | |
| Fabricantes | ON Semiconductor | |
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NLAS3699
Dual DPDT Ultra−Low RON
Switch
The NLAS3699 is a dual independent ultra−low RON DPDT analog
switch. This device is designed for low operating voltage, high current
switching of speaker output for cell phone applications. It can switch a
balanced stereo output. The NLAS3699 can handle a balanced
microphone/speaker/ring−tone generator in a monophone mode. The
device contains a break−make feature.
Features
• Single Supply Operation
1.65 to 4.7 V VCC
Function Directly from LiON Battery
• Maximum Breakdown Voltage: 5.0 V
• Tiny 3 x 3 mm QFN Pb−Free Package
Meet JEDEC MO−220 Specifications
• Low Static Power
Typical Applications
• Cell Phone Speaker/Microphone Switching
• Ringtone−Chip/Amplifier Switching
• Four Unbalanced (Single−Ended) Switches
• Stereo Balanced (Push−Pull) Switching
Important Information
• ESD Protection:
HBM (Human Body Model) > 4000 V
MM (Machine Model) > 400 V
• Continuous Current Rating Through each Switch ±300 mA
• Conforms to: JEDEC MO−220, Issue H, Variation VEED−6
• Pin for Pin Compatible with STG3699
http://onsemi.com
MARKING
DIAGRAMS
ÇÇQFN−16
ÇÇCASE 485AE
16
1
NLAS
1 3699
ALYW
G
XXXX = Specific Device Code
A = Assembly Location
L = Wafer Lot
Y = Year
W = Work Week
G = Pb−Free Package
D1 1S1 Vcc 4S2
16 15 14 13
1S2 1
1−2IN 2
2S1 3
D2 4
12 D4
11 4S1
10 3−4IN
9 3S2
5678
2S2 GND 3S1 D3
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 9 of this data sheet.
© Semiconductor Components Industries, LLC, 2004
October, 2004 − Rev. 0
1
Publication Order Number:
NLAS3699/D
1 page  
NLAS3699
AC ELECTRICAL CHARACTERISTICS (Input tr = tf = 3.0 ns)
Symbol
Parameter
tON Turn−On Time
Test Conditions
RL = 50 W, CL = 35 pF
(Figures 3 and 4)
tOFF
Turn−Off Time
RL = 50 W, CL = 35 pF
(Figures 3 and 4)
tBBM
Minimum Break−Before− VIS = 3.0
Make Time
RL = 300 W, CL = 35 pF
(Figure 2)
VCC
(V)
2.3 − 4.7
2.3 − 4.7
3.0
Guaranteed Maximum Limit
VIS *555C to 255C
t855C
t1255C
(V) Min Typ* Max Min Max Min Max Unit
1.5 50 60 60 ns
1.5 30 40 40 ns
1.5 2 15
ns
CIN Control Pin Input Capacitance
CSN SN Port Capacitance
CD D Port Capacitance When Switch is Enabled
*Typical Characteristics are at 25°C.
Typical @ 25, VCC = 5.0 V
2.5
72
230
pF
pF
pF
ADDITIONAL APPLICATION CHARACTERISTICS (Voltages Referenced to GND Unless Noted)
Symbol
Parameter
Condition
BW Maximum On−Channel −3dB
VIN centered between VCC and GND
Bandwidth or Minimum Frequency (Figure 5)
Response (Figure 12)
VONL
Maximum Feed−through On Loss VIN = 0 dBm @ 100 kHz to 50 MHz
VIN centered between VCC and GND (Figure 5)
VISO
Off−Channel Isolation (Figure 13)
f = 100 kHz; VIS = 1 V RMS; CL = 5 nF
VIN centered between VCC and GND(Figure 5)
Q
Charge Injection Select Input to
VIN = VCC to GND, RIS = 0 W, CL = 1 nF
Common I/O (Figure 8)
Q = CL − DVOUT (Figure 6)
THD
Total Harmonic Distortion THD +
Noise (Figure 7)
FIS = 20 Hz to 20 kHz, RL = Rgen = 600 W, CL = 50 pF
VIS = 2 V RMS
VCT
Channel−to−Channel Crosstalk
f = 100 kHz; VIS = 1 V RMS, CL = 5 pF, RL = 50 W
VIN centered between VCC and GND (Figure 5)
5. Off−Channel Isolation = 20log10 (Vcom/Vno), Vcom = output, Vno = input to off switch.
VCC
(V)
1.65 − 4.7
1.65 − 4.7
1.65 − 4.7
1.65 − 4.7
4.3
1.65 − 4.7
255C
Typical
20
−0.06
−62
50
0.01
−62
Unit
MHz
dB
dB
pC
%
dB
http://onsemi.com
5
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