|
|
PDF FDI047AN08A0 Data sheet ( Hoja de datos )
| Número de pieza | FDI047AN08A0 | |
| Descripción | N-Channel PowerTrench MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de FDI047AN08A0 (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
|
No Preview Available !
June 2004
FDP047AN08A0 / FDI047AN08A0 / FDH047AN08A0
N-Channel PowerTrench® MOSFET
75V, 80A, 4.7mΩ
Features
• rDS(ON) = 4.0mΩ (Typ.), VGS = 10V, ID = 80A
• Qg(tot) = 92nC (Typ.), VGS = 10V
• Low Miller Charge
• Low QRR Body Diode
• UIS Capability (Single Pulse and Repetitive Pulse)
• Qualified to AEC Q101
Formerly developmental type 82684
Applications
• 42V Automotive Load Control
• Starter / Alternator Systems
• Electronic Power Steering Systems
• Electronic Valve Train Systems
• DC-DC converters and Off-line UPS
• Distributed Power Architectures and VRMs
• Primary Switch for 24V and 48V systems
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
SOURCE
DRAIN
GATE
TO-220AB
FDP SERIES
DRAIN TO-262AB
(FLANGE) FDI SERIES
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
VGS
ID
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (TC < 144oC, VGS = 10V)
Continuous (TC = 25oC, VGS = 10V, with RθJA = 62oC/W)
Pulsed
EAS Single Pulse Avalanche Energy (Note 1)
Power dissipation
PD Derate above 25oC
TJ, TSTG Operating and Storage Temperature
Thermal Characteristics
RθJC
RθJA
RθJA
Thermal Resistance Junction to Case TO-220, TO-262, TO-247
Thermal Resistance Junction to Ambient TO-220, TO-262 (Note 2)
Thermal Resistance Junction to Ambient TO-247 (Note 2)
SOURCE
DRAIN
GATE
DRAIN G
(FLANGE)
TO-247
FDH SERIES
Ratings
75
±20
80
15
Figure 4
475
310
2.0
-55 to 175
0.48
62
30
D
S
Units
V
V
A
A
A
mJ
W
W/oC
oC
oC/W
oC/W
oC/W
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a
copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
certification.
©2004 Fairchild Semiconductor Corporation
FDP047AN08A0 / FDI047AN08A0 / FDH047AN08A0 Rev. C
1 page  
Typical Characteristics TC = 25°C unless otherwise noted
1.2 1.15
VGS = VDS, ID = 250µA
ID = 250µA
1.10
1.0
1.05
0.8
1.00
0.6
0.95
0.4
-80
-40 0 40 80 120 160
TJ, JUNCTION TEMPERATURE (oC)
200
Figure 11. Normalized Gate Threshold Voltage vs
Junction Temperature
0.90
-80
-40 0 40 80 120 160
TJ, JUNCTION TEMPERATURE (oC)
200
Figure 12. Normalized Drain to Source
Breakdown Voltage vs Junction Temperature
10000
COSS ≅ CDS + CGD
1000
CRSS = CGD
CISS = CGS + CGD
100
0.1
VGS = 0V, f = 1MHz
1 10
VDS, DRAIN TO SOURCE VOLTAGE (V)
75
Figure 13. Capacitance vs Drain to Source
Voltage
10
VDD = 40V
8
6
4
WAVEFORMS IN
2 DESCENDING ORDER:
ID = 80A
ID = 10A
0
0 25 50 75 100
Qg, GATE CHARGE (nC)
Figure 14. Gate Charge Waveforms for Constant
Gate Currents
©2004 Fairchild Semiconductor Corporation
FDP047AN08A0 / FDI047AN08A0 / FDH047AN08A0 Rev. C
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet FDI047AN08A0.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| FDI047AN08A0 | N-Channel PowerTrench MOSFET 75V/ 80A/ 4.7m | Fairchild Semiconductor |
| FDI047AN08A0 | N-Channel PowerTrench MOSFET | Fairchild Semiconductor |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |