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SB30-03F fiches techniques PDF

Sanyo Semicon Device - 30V/ 3A Rectifier

Numéro de référence SB30-03F
Description 30V/ 3A Rectifier
Fabricant Sanyo Semicon Device 
Logo Sanyo Semicon Device 





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SB30-03F fiche technique
Ordering number:EN2998
SB30-03F
Schottky Barrier Diode
30V, 3A Rectifier
Applications
· High frequency rectification (switching regulators,
converters, choppers).
Features
· Low forward voltage (VF max=0.55V).
· Fast reverse recovery time (trr max=30ns).
· Low switching noise.
· Low leakage current and high reliability due to
highly reliable planar structure.
Package Dimensions
unit:mm
1200
[SB30-03F]
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Repetitive Peak Reverse Voltage
Nonrepetitive Peak Reverse Surge Voltage
Average Output Current
Surge Forward Current
Junction Temperature
Storage Temperature
Symbol
VRRM
VRSM
IO
IFSM
Tj
Tstg
Conditions
50Hz, resistive load, Tc=114˚C
50Hz sine wave, 1 cycle
Electrical Characteristics at Ta = 25˚C
Parameter
Reverse Voltage
Forward Voltage
Reverse Current
Interterminal Capacitance
Reverse Recovery Time
Thermal Resistance
trr Test Circuit
Symbol
VR
VF
IR
C
trr
Rthj-c
Conditons
IR=2mA
IF=3A
VR=15V
VR=10V, f=1MHz
IF=IR=300mA, See sepcified Test Circuit
Junction-Case:Smoothed DC
A:Anode
C:Cathode
SANYO:TO-126LP
Ratings
30
35
3
30
–55 to +125
–55 to +125
Unit
V
V
A
A
˚C
˚C
Ratings
min typ
30
160
4
max
0.55
700
30
Unit
V
V
µA
pF
ns
˚C/W
Unit (resistance:)
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
41098HA (KT)/1269TA, TS No.2998-1/3

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