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SB160-05H fiches techniques PDF

Sanyo Semicon Device - 50V/ 16A Rectifier

Numéro de référence SB160-05H
Description 50V/ 16A Rectifier
Fabricant Sanyo Semicon Device 
Logo Sanyo Semicon Device 





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SB160-05H fiche technique
Ordering number :EN1982A
SB160-05H
Schottky Barrier Diode (Twin Type · Cathode Common)
50V, 16A Rectifier
Applications
· High frequency rectification (switching regulators,
converters, choppers).
Features
· Low forward voltage (VF max=0.55V).
· Fast reverse recovery time (trr max=75ns).
· Low switching noise.
· Low leakage current and high reliability due to
highly reliable planar structure.
Package Dimensions
unit:mm
1160
[SB160-05H]
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Repetitive Peak Reverse Voltage
Nonrepetitive Peak Reverse Surge Voltage
Average Output Current
Surge Forward Current
Junction Temperature
Storage Temperature
Symbol
VRRM
VRSM
IO
IFSM
Tj
Tstg
Conditions
50Hz, resistive load, Tc=108˚C
50Hz sine wave, 1 cycle
Electrical Characteristics at Ta = 25˚C
Parameter
Reverse Voltage
Forward Voltage
Reverse Current
Reverse Recovery Time
Thermal Resistance
Note)*:Value per element
Electrical Connection
Symbol
Conditions
VR
VF
IR
trr
Rthj-c
IR=–4mA, Tj=25˚C*
IF=8A, Tj=25˚C*
VR=–25V, Tj=25˚C*
IF=2A, Tj=25˚C*, –dIF/dt=10A/µs
Junction-Case:Smoothed DC
C:Cathode
A:Anode
SANYO:TO-3PB
Ratings
–50
–55
16
140
–55 to +125
–55 to +125
Unit
V
V
A
A
˚C
˚C
Ratings
min typ
–50
max
0.55
–0.8
75
1.3
Unit
V
V
mA
ns
˚C/W
A:Anode
C:Cathode
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
33098HA (KT)/4198TA, TS No.1982-1/3

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