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SB10-05A3 fiches techniques PDF

Sanyo Semicon Device - 50V/ 1.0A Rectifier

Numéro de référence SB10-05A3
Description 50V/ 1.0A Rectifier
Fabricant Sanyo Semicon Device 
Logo Sanyo Semicon Device 





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SB10-05A3 fiche technique
Ordering number:EN2931A
SB10-05A2, SB10-05A3
Schottky Barrier Diode
50V, 1.0A Rectifier
Applications
· High frequency rectification (switching regulators,
converters, choppers).
Features
· Low forward voltage (VF max=0.58V).
· Fast reverse recovery time (trr max=30ns).
· Low switching noise.
· Average rectified current (IO=1.0A).
Package Dimensions
unit:mm
1208
[SB10-05A2]
unit:mm
1209
[SB10-05A3]
C:Cathode
A:Anode
Specifications
Absolute Maximum Ratings at Ta = 25˚C
C:Cathode
A:Anode
Parameter
Repetitive Peak Reverse Voltage
Nonrepetitive Peak Reverse Surge Voltage
Average Rectified Current
Symbol
VRRM
VRSM
IO
Surge Forward Current
Junction Temperature
IFSM
Tj
Storage Temperature
Tstg
Electrical Characteristics at Ta = 25˚C
Conditions
SB10-05A2 50Hz, resistive load, sine wave, Ta=33˚C
(L=8mm, 10×10mm2 print land)
SB10-05A3 50Hz, resistive load, sine wave, Ta=29˚C
(L=3mm, 5×5mm2 print land)
50Hz sine wave, 1 cycle
Ratings
Unit
50 V
55 V
1.0 A
1.0 A
25
125
–40 to +125
A
˚C
˚C
Parameter
Forward Voltage
Reverse Current
Reverse Recovery Time
Thermal Resistance (Junction-Ambient)
Symbol
VF
IR
trr
Rth(j-a)
Conditons
IF=1.0A
VR=50V
IFM=1A, –dIF/dt=50A/µs
No fin, device only
Ratings
min typ max
Unit
0.58 V
1.0 mA
30 ns
140 ˚C/W
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
43098HA (KT)/D198TA, TS No.2931-1/3

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