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Sanyo Semicon Device - 30V/ 700mA Rectifier

Numéro de référence SB07W03P
Description 30V/ 700mA Rectifier
Fabricant Sanyo Semicon Device 
Logo Sanyo Semicon Device 





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SB07W03P fiche technique
Ordering number:EN3616A
SB07W03P
Schottky Barrier Diode (Twin Type · Cathode Common)
30V, 700mA Rectifier
Applications
· General rectifier.
· High frequency rectification (switching regulators,
converters, choppers).
Features
· Low forward voltage (VF max=0.55V).
· Fast reverse recovery time (trr max=10ns).
· Low switching noise.
· Low leakage current and high reliability due to
highly reliable planar structure.
Package Dimensions
unit:mm
1239A
[SB07W03P]
1:Anode
2:Cathode
3:Anode
Specifications
Absolute Maximum Ratings at Ta = 25˚C (Value per element)
Parameter
Repetitive Peak Reverse Voltage
Non-repetitive Peak Reverse Surge Voltage
Average Output Current
Surge Forward Current
Junction Temperature
Storage Temperature
Symbol
VRRM
VRSM
IO
IFSM
Tj
Tstg
Conditions
50Hz sine wave, 1 cycle
Electrical Characteristics at Ta = 25˚C (Value per element)
Parameter
Reverse Voltage
Forward Voltage
Reverse Current
Interterminal Capacitance
Reverse Recovery Time
Thermal Resistance
· Marking:SF
trr Test Circuit
Symbol
Conditions
VR
VF
IR
C
trr
Rthj-a(1)
Rthj-a(2)
IR=300µA
IF=700mA
VR=15V
VR=10V, f=1MHz
IF=IR=100mA, See specified Test Circuit.
Mounted on 250mm2×0.8mm ceramic board
Electrical Connection
SANYO:PCP
Ratings
30
35
700
5
–55 to +125
–55 to +125
Unit
V
V
mA
A
˚C
˚C
Ratings
min typ
30
28
300
110
max
0.55
50
10
Unit
V
V
µA
pF
ns
˚C/W
˚C/W
1:Anode
2:Cathode
3:Anode
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
43098HA (KT)/N120MH, JK No.3616-1/2

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