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Sanken electric - Silicon PNP Epitaxial Planar Transistor with Fast-Recovery Rectifier Diode(Voltage change switch for motor)

Numéro de référence SAH03
Description Silicon PNP Epitaxial Planar Transistor with Fast-Recovery Rectifier Diode(Voltage change switch for motor)
Fabricant Sanken electric 
Logo Sanken electric 





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SAH03 fiche technique
SAH03
Equivalent
circuit 2
(4k)
(100)
4
13
Silicon PNP Epitaxial Planar Transistor with Fast-Recovery Rectifier Diode
sAbsolute maximum ratings (Ta=25°C)
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
SAH03
–60
–60
–6
–1.2
–0.1
1.0(Ta=25°C)
150
–40to+150
Unit
V
V
V
A
A
W
°C
°C
sElectrical Characteristics
Symbol
ICBO
IEBO
V(BR)CEO
hFE
VCE(sat)
fT
COB
Conditions
VCB=–60V
VEB=–6V
IC=–10mA
VCE=–4V, IC=–1A
IC=–1A, IB=–2mA
VCE=–12V, IE=0.1A
VCB=–10V, f=1MHz
VR IR=100µA
VF IF=0.5A
t r r IF=±100mA
Application : Voltage change switch for motor
(Ta=25°C)
SAH03
–10max
–3max
–60min
2000 to 12000
–1.4max
100typ
30typ
Unit
µA
mA
V
V
MHz
pF
External Dimensions PS Pack
2
3
4
ab
1
6.8max
8.0±0.5
6.3±0.2
3.6±0.2
4.0max
1.4±0.2
100 min
1.5 max
100 typ
V
V
ns
1.0±0.3
0~0.1
3.0±0.2
9.8±0.3
Weight : Approx 0.23g
a. Type No.
b. Lot No.
I C– V CE Characteristics (Typical)
–5.0mA
–2.4
–10.0mA
–2.0mA –1.2mA
–1.0mA
–2 –0.8mA
–0.6mA
–0.5mA
–0.4mA
–1
IB=–0.3mA
D i o d e I F– V F Characteristics
1.2
1
0.5
0.1
0.05
I C– V BE Temperature Characteristics (Typical)
–2.4
(VCE=–4V)
–2
–1
0
0 –1 –2 –3 –4 –5 –6
Collector-Emitter Voltage VCE(V)
0.01
0
1
Forward Voltage VF(V)
1.6
0
0 –1 –2 –3
Base-Emittor Voltage VBE(V)
t on• t stg• t f– I C Characteristics (Typical) hFE–IC Temperature Characteristics (Typical)
2
1
0.5
ton
tstg
tf
VCC 30V
–IB1=IB2=2mA
10000
5000
1000
500
125˚C
25˚C
–30˚C
(VCE=–4V)
θ j-a– t Characteristics
300
100
10
0.1
–0.2
–0.5
–1
Collector Current IC(A)
–2.4
100
50
–0.02
–0.05 –0.1
–0.5
Collector Current IC(A)
–1
1
0.3
–2.4 0.001 0.01
0.1 1 10
Time t(ms)
100
1000
VCE(sat)–IB Temperature Characteristics (Typical)
–3 125˚C
(IC=–0.5A)
25˚C
–30˚C
–2
Safe Operating Area (Single Pulse)
–3
–1
–0.5
Pc–Ta Derating
1.5
1.0
–1
0
–0.1
–0.5
–1
Base Current IB(mA)
–0.1
Without Heatsink
Natural Cooling
–0.05
–5 –1
–5 –10
–50 –100
Collector-Emitter Voltage VCE(V)
0.5
Glass epoxy substrate
(95 x 69 x 1.2mm)
Natural Cooling
0
0 25 50 75
100 125
Ambient Temperature Ta(˚C)
150
163

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