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EIC discrete Semiconductors - SCHOTTKY BARRIER RECTIFIER DIODES

Numéro de référence SBO30
Description SCHOTTKY BARRIER RECTIFIER DIODES
Fabricant EIC discrete Semiconductors 
Logo EIC discrete Semiconductors 





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SBO30 fiche technique
SBO20 - SBOB0
PRV : 20 - 100 Volts
IO : 1.5 Amperes
SCHOTTKY BARRIER
RECTIFIER DIODES
DO - 41
FEATURES :
* High current capability
* High surge current capability
* High reliability
* High efficiency
* Low power loss
* Low forward voltage drop
* Low cost
MECHANICAL DATA :
* Case : DO-41 Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.339 gram
0.107 (2.74)
0.080 (2.03)
0.034 (0.86)
0.028 (0.71)
1.00 (25.4)
MIN.
0.205 (5.20)
0.160 (4.10)
1.00 (25.4)
MIN.
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
Maximum Recurrent Peak Reverse Voltage
SYMBOL SB SB SB SB SB SB SB SB SB UNIT
O20 O30 O40 O50 O60 O70 O80 O90 OB0
VRRM 20 30 40 50 60 70 80 90 100 Volts
Maximum RMS Voltage
VRMS 14 21 28 35 42 49 56 63 70 Volts
Maximum DC Blocking Voltage
VDC 20 30 40 50 60 70 80 90 100 Volts
Maximum Average Forward Current
0.375", 9.5mm Lead Length See Fig.1
IF(AV)
1.5 Amp.
Peak Forward Surge Current, 8.3ms single half sine wave
superimposed on rated load (JEDEC Method)
IFSM
50 Amp.
Maximum Forward Voltage at IF = 1.5 Amp. (Note 1)
VF 0.5
0.7
0.79 Volt.
Maximum Reverse Current at
Rated DC Blocking Voltage (Note 1)
IR
0.5 mA
Junction Temperature Range
TJ - 65 to + 125
- 65 to + 150
°C
Storage Temperature Range
TSTG
- 65 to + 150
°C
Notes :
(1) Pulse Test : Pulse Width = 300 µs, Duty Cycle = 2%.
UPDATE : SEPTEMBER 12, 1998

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