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SB80-18 fiches techniques PDF

Sanyo Semicon Device - 180V/ 8A Rectifier

Numéro de référence SB80-18
Description 180V/ 8A Rectifier
Fabricant Sanyo Semicon Device 
Logo Sanyo Semicon Device 





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SB80-18 fiche technique
Ordering number:EN2583B
SB80-18
Schottky Barrier Diode (Twin Type · Cathode Common)
180V, 8A Rectifier
Applications
· High frequency rectification (switching regulators,
converters, choppers).
Features
· Low forward voltage (VF max=0.85V).
· Fast reverse recovery time (trr max=40ns).
· Low switching noise.
· Low leakage current and high reliability due to
highly reliable planar structure.
Package Dimensions
unit:mm
1160
[SB80-18]
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Repetitive Peak Reverse Voltage
Nonrepetitive Peak Reverse Surge Voltage
Average Output Current
Surge Forward Current
Junction Temperature
Storage Temperature
Electrical Characteristics
Symbol
VRRM
VRSM
IO
IFSM
Tj
Tstg
Conditions
50Hz, resistive load, Tc=105˚C
50Hz sine wave, 1 cycle
Parameter
Reverse Voltage
Forward Voltage
Reverse Current
Reverse Recovery Time
Thermal Resistance
Note*:Value per element
Electrical Connection
Symbol
Conditons
VR
VF
IR
trr
Rthj-c
IR=3mA, Tj=25˚C, *
IF=3A, Tj=25˚C, *
VR=90V, Tj=25˚C, *
IF=2A, Tj=25˚C, *, –dIF/dt=10A/µs
Junction-Case:Smoothed DC
1:Anode
2:Cathode
3:Anode
SANYO:TO-3PB
Ratings
180
190
8
80
–55 to +125
–55 to +125
Unit
V
V
A
A
˚C
˚C
Ratings
min typ
180
max
0.85
0.6
40
1.5
Unit
V
V
mA
ns
˚C/W
1:Anode
2:Cathode
3:Anode
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
41098HA (KT)/5248TA, TS No.2583-1/3

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