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SB370 Datasheet دیتاشیت PDF دانلود

دیتاشیت - EIC discrete Semiconductors - SCHOTTKY BARRIER RECTIFIER DIODES

شماره قطعه SB370
شرح مفصل SCHOTTKY BARRIER RECTIFIER DIODES
تولید کننده EIC discrete Semiconductors 
آرم EIC discrete Semiconductors 


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SB370 شرح
SB320 - SB3B0
PRV : 20 - 100 Volts
IO : 3.0 Amperes
SCHOTTKY BARRIER
RECTIFIER DIODES
DO-201AD
FEATURES :
* High current capability
* High surge current capability
* High reliability
* High efficiency
* Low power loss
* Low forward voltage drop
MECHANICAL DATA :
* Case : DO-201AD Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 1.21 grams
0.21 (5.33)
0.19 (4.82)
0.052 (1.32)
0.048 (1.22)
1.00 (25.4)
MIN.
0.375 (9.52)
0.285 (7.24)
1.00 (25.4)
MIN.
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Current
0.375", 9.5mm Lead Length See Fig.1
Peak Forward Surge Current,
8.3ms single half sine wave superimposed
on rated load (JEDEC Method)
Maximum Forward Voltage at IF = 3.0 Amps.
Maximum Reverse Current at
Ta = 25 °C
Rated DC Blocking Voltage (Note 1) Ta = 100 °C
Junction Temperature Range
Storage Temperature Range
SYMBOL
VRRM
VRMS
VDC
SB
320
SB
330
SB
340
SB
350
SB
360
SB
370
SB
380
SB
390
SB
3B0
UNIT
20 30 40 50 60 70 80 90 100 Volts
14 21 28 35 42 49 56 63 70 Volts
20 30 40 50 60 70 80 90 100 Volts
IF(AV)
3.0 Amps.
IFSM
VF
IR
IR(H)
TJ
TSTG
0.5
- 65 to + 125
80
0.74 0.79
0.5
20
- 65 to + 150
- 65 to + 150
Amps.
Volt.
mA
mA
°C
°C
Notes :
(1) Pulse Test : Pulse Width = 300 µs, Duty Cycle = 2%
UPDATE : SEPTEMBER 12, 1998

قانون اساسیصفحه 2
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