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Samsung semiconductor - 64M x 8 Bit / 32M x 16 Bit NAND Flash Memory

Numéro de référence K9K1208Q0C
Description 64M x 8 Bit / 32M x 16 Bit NAND Flash Memory
Fabricant Samsung semiconductor 
Logo Samsung semiconductor 





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K9K1208Q0C fiche technique
K9K1208Q0C
K9K1208D0C
K9K1208U0C
K9K1216Q0C
K9K1216D0C
K9K1216U0C
Document Title
64M x 8 Bit , 32M x 16 Bit NAND Flash Memory
FLASH MEMORY
Revision History
Revision No. History
0.0 Initial issue.
Draft Date
Sep. 12th 2002
1.0 1.Pin assignment of TBGA dummy ball is changed.
(before) DNU --> (after) N.C
Jan. 3rd 2003
2. Add the Rp vs tr ,tf & Rp vs ibusy graph for 1.8V device (Page 34)
3. Add the data protection Vcc guidence for 1.8V device - below about
1.1V. (Page 35)
4. Add the specification of Block Lock scheme.(Page 29~32)
5. Pin assignment of TBGA A3 ball is changed.
(before) N.C --> (after) Vss
2.0 1. The Maximum operating current is changed.
Read : Icc1 20mA-->30mA
Program : Icc2 20mA-->40mA
Erase : Icc3 20mA-->40mA
Jan. 17th 2003
2.1 The min. Vcc value 1.8V devices is changed.
K9K12XXQ0C : Vcc 1.65V~1.95V --> 1.70V~1.95V
Mar. 5th 2003
2.2 Pb-free Package is added.
K9K1208U0C-HCB0,HIB0
K9K12XXQ0C-HCB0,HIB0
K9K1216U0C-HCB0,HIB0
K9K1216Q0C-HCB0,HIB0
Mar. 13rd 2003
2.3 Errata is added.(Front Page)-K9K12XXQ0C
tWC tWP tRC tREH tRP tREA tCEA
Specification 45 25 50 15 25 30 45
Relaxed value 60 40 60 20 40 40 55
Mar. 17th 2003
2.4 1. Max. Thickness of TBGA packge is changed.
0.09±0.10(Before) --> 1.10±0.10(After)
2. New definition of the number of invalid blocks is added.
Apr. 4th 2003
(Minimum 1004 valid blocks are guaranteed for each contiguous 128Mb
memory space.)
2.5
1. The guidence of LOCKPRE pin usage is changed.
Don’t leave it N.C. Not using LOCK MECHANISM & POWER-ON AUTO-
Jul. 4th 2003
READ, connect it Vss.(Before)
--> Not using LOCK MECHANISM & POWER-ON AUTO-READ, connect
it Vss or leave it N.C(After)
2. 2.65V device is added.
3. Note is added.
(VIL can undershoot to -0.4V and VIH can overshoot to VCC +0.4V for
durations of 20 ns or less.)
Note : For more detailed features and specifications including FAQ, please refer to Samsung’s Flash web site.
http://www.samsung.com/Products/Semiconductor/Flash/TechnicalInfo/datasheets.htm
Remark
Advance
Preliminary
Preliminary
The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right
to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have
any questions, please contact the SAMSUNG branch office near you.
1

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