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Samsung semiconductor - 64M x 8 Bit / 32M x 16 Bit NAND Flash Memory

Numéro de référence K9K1208D0C
Description 64M x 8 Bit / 32M x 16 Bit NAND Flash Memory
Fabricant Samsung semiconductor 
Logo Samsung semiconductor 





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K9K1208D0C fiche technique
K9F8008W0M-TCB0, K9F8008W0M-TIB0
Document Title
1M x 8 bit NAND Flash Memory
FLASH MEMORY
Revision History
Revision No. History
Draft Date
0.0 Data Sheet 1997
April 10th 1997
1.0 Data Sheet 1998
1. Changed tBERS parameter : 5ms(Typ.) 2ms(Typ.)
10ms(Max.) 4ms(Max.)
2. Changed tPROG parameter : 1.5ms(Max.) 1.0ms(Max.)
April 10th 1998
1.1 Data sheet 1998
1. Cjanged DC and Operating Characteristics
July 14th 1998
Parameter
Vcc=2.7V~3.6V
Typ Max
Vcc=3.6V~5.5V
Typ Max
Unit
Burst Read
Operating
Current Program
Eraase
10 5
10 5
10 5
20 10
20 10
20 10
15 10
15 10
15 10
30 20
30 20
30 20
mA
Stand-by Current (CMOS) 5 10
50
10 100 50
Input Leakage Current
- 10 → ±10 - 10 → ±10 µA
Output Leakage Current
- 10 → ±10 - 10 → ±10
1.2 Data Sheet 1999
April 10th 1999
1) Added CE dont’ care mode during the data-loading and reading
1.3 1) Revised real-time map-out algorithm(refer to technical notes)
July 23th 1999
Changed device name
1.4 - KM29W8000T -> K9F8008W0M-TCB0
- KM29W8000IT -> K9F8008W0M-TIB0
Sep. 15th 1999
Remark
Advance
Preliminary
Final
Final
Final
Final
The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right
to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have
any questions, please contact the SAMSUNG branch office near you.
1

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