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PDF K9F5616D0C-Y Data sheet ( Hoja de datos )
| Número de pieza | K9F5616D0C-Y | |
| Descripción | 32M x 8 Bit / 16M x 16 Bit NAND Flash Memory | |
| Fabricantes | Samsung semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de K9F5616D0C-Y (archivo pdf) en la parte inferior de esta página. Total 42 Páginas | ||
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K9F5608Q0C K9F5616Q0C
K9F5608D0C K9F5616D0C
K9F5608U0C K9F5616U0C
FLASH MEMORY
Document Title
32M x 8 Bit , 16M x 16 Bit NAND Flash Memory
Revision History
Revision No. History
0.0 Initial issue.
Draft Date
Apr. 25th 2002
Remark
Advance
1.0 1.Pin assignment of TBGA dummy ball is changed.
(before) DNU --> (after) N.C
Dec.14th 2002
Preliminary
2. Add the Rp vs tr ,tf & Rp vs ibusy graph for 1.8V device (Page 36)
3. Add the data protection Vcc guidence for 1.8V device - below about
1.1V. (Page 37)
4. Add the specification of Block Lock scheme.(Page 32~35)
5. Pin assignment of TBGA A3 ball is changed.
(before) N.C --> (after) Vss
6. Pin assignment of WSOP #38 pin is changed.
(before) LOCKPRE --> (after) N.C
2.0 1. The Maximum operating current is changed.
Program : Icc2 20mA-->25mA
Erase : Icc3 20mA-->25mA
Jan. 17th 2003
Preliminary
2.1 The min. Vcc value 1.8V devices is changed.
K9F56XXQ0C : Vcc 1.65V~1.95V --> 1.70V~1.95V
Mar. 5th 2003
Preliminary
2.2 Pb-free Package is added.
K9F5608U0C-FCB0,FIB0
K9F5608Q0C-HCB0,HIB0
K9F5616U0C-HCB0,HIB0
K9F5616U0C-PCB0,PIB0
K9F5616Q0C-HCB0,HIB0
K9F5608U0C-HCB0,HIB0
K9F5608U0C-PCB0,PIB0
Mar. 13rd 2003
2.3 Errata is added.(Front Page)-K9F56XXQ0C
tWC tWH tWP tRC tREH tRP tREA tCEA
Specification 45 15 25 50 15 25 30 45
Relaxed value 60 20 40 60 20 40 40 55
Mar. 26th 2003
2.4 New definition of the number of invalid blocks is added.
Apr. 4th 2003
(Minimum 1004 valid blocks are guaranteed for each contiguous 128Mb
memory space.)
Jun. 30th 2003
2.5 1. The guidence of LOCKPRE pin usage is changed.
Don’t leave it N.C. Not using LOCK MECHANISM & POWER-ON AUTO-
READ, connect it Vss.(Before)
--> Not using LOCK MECHANISM & POWER-ON AUTO-READ, connect
it Vss or leave it N.C(After)
2. 2.65V device is added.
3.Note is added.
(VIL can undershoot to -0.4V and VIH can overshoot to VCC +0.4V for
durations of 20 ns or less.)
Note : For more detailed features and specifications including FAQ, please refer to Samsung’s Flash web site.
http://www.samsung.com/Products/Semiconductor/Flash/TechnicalInfo/datasheets.htm
The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right
to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have
any questions, please contact the SAMSUNG branch office near you.
1
1 page  
K9F5608Q0C K9F5616Q0C
K9F5608D0C K9F5616D0C
K9F5608U0C K9F5616U0C
FLASH MEMORY
PIN CONFIGURATION (TBGA)
K9F56XXX0C-DCB0,HCB0/DIB0,HIB0
X8 X16
12 3 4 5 6
12 3 4 5 6
N.C N.C
N.C N.C
A N.C
B
C
D
E
F
G
H
N.C N.C
/WP ALE Vss /CE /WE R/B
NC /RE CLE NC NC NC
NC NC NC NC NC NC
NC NC NC NC NC NC
NC NC NC NC NC LOCKPRE
NC I/O0 NC NC NC Vcc
NC I/O1 NC VccQ I/O5 I/O7
Vss I/O2 I/O3 I/O4 I/O6 Vss
Top View
N.C N.C
N.C N.C
N.C N.C
N.C N.C
PACKAGE DIMENSIONS
63-Ball TBGA (measured in millimeters)
N.C N.C
N.C N.C
N.C
A
B
C
D
E
F
G
H
N.C N.C
/WP ALE Vss /CE /WE R/B
NC /RE CLE NC NC NC
NC NC NC NC NC NC
NC NC NC NC NC NC
NC NC NC I/O5 I/O7 LOCKPRE
I/O8 I/O1 I/O10 I/O12 IO14 Vcc
I/O0 I/O9 I/O3 VccQ I/O6 I/O15
Vss I/O2 I/O11 I/O4 I/O13 Vss
N.C N.C
N.C N.C
N.C N.C
N.C N.C
Top View
Top View
9.00±0.10
(Datum A)
Bottom View
9.00±0.10
0.80 x 9= 7.20
0.80 x 5= 4.00
0.80
654321
A
B
#A1
A
B
(Datum B) C
D
E
F
G
H
63-∅0.45±0.05
∅ 0.20 M A B
0.08MAX
2.00
Side View
9.00±0.10
0.45±0.05
5
5 Page 
K9F5608Q0C K9F5616Q0C
K9F5608D0C K9F5616D0C
K9F5608U0C K9F5616U0C
FLASH MEMORY
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Voltage on any pin relative to VSS
Temperature Under Bias
Storage Temperature
Short Circuit Current
K9F56XXX0C-XCB0
K9F56XXX0C-XIB0
K9F56XXX0C-XCB0
K9F56XXX0C-XIB0
VIN/OUT
VCC
VCCQ
TBIAS
TSTG
Ios
Rating
1.8V DEVICE
3.3V/2.65V DEVICE
-0.6 to + 2.45
-0.6 to + 4.6
-0.2 to + 2.45
-0.6 to + 4.6
-0.2 to + 2.45
-0.6 to + 4.6
-10 to +125
-40 to +125
-65 to +150
5
Unit
V
°C
°C
mA
NOTE :
1. Minimum DC voltage is -0.6V on input/output pins. During transitions, this level may undershoot to -2.0V for periods <30ns.
Maximum DC voltage on input/output pins is VCC,+0.3V which, during transitions, may overshoot to VCC+2.0V for periods <20ns.
2. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions
as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
RECOMMENDED OPERATING CONDITIONS
(Voltage reference to GND, K9F56XXX0C-XCB0 :TA=0 to 70°C, K9F56XXX0C-XIB0:TA=-40 to 85°C)
Parameter
Symbol
K9F56XXQ0C(1.8V)
Min Typ. Max
K9F56XXD0C(2.65V)
Min Typ. Max
K9F56XXU0C(3.3V)
Min Typ. Max
Supply Voltage
VCC 1.70 1.8 1.95 2.4 2.65 2.9 2.7 3.3 3.6
Supply Voltage
VCCQ 1.70 1.8 1.95 2.4 2.65 2.9 2.7 3.3 3.6
Supply Voltage
VSS 0 0 0 0 0 0 0 0 0
Unit
V
V
V
11
11 Page | ||
| Páginas | Total 42 Páginas | |
| PDF Descargar | [ Datasheet K9F5616D0C-Y.PDF ] | |
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