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Samsung semiconductor - 32M x 8 Bit / 16M x 16 Bit NAND Flash Memory

Numéro de référence K9F5608U0B-YIB0
Description 32M x 8 Bit / 16M x 16 Bit NAND Flash Memory
Fabricant Samsung semiconductor 
Logo Samsung semiconductor 





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FLASH MEMORY
Document Title
32M x 8 Bit , 16M x 16 Bit NAND Flash Memory
Revision History
Revision No. History
0.0 Initial issue.
Draft Date
May. 15th 2001
0.1 At Read2 operation in X16 device
: A3 ~ A7 are Don’t care ==> A3 ~ A7 are "L"
Sep. 20th 2001
0.2 1. IOL(R/B) of 1.8V device is changed.
Nov. 5th 2001
-min. Value: 7mA -->3mA
-typ. Value: 8mA -->4mA
2. AC parameter is changed.
tRP(min.) : 30ns --> 25ns
3. WP pin provides hardware protection and is recommended to be kept
at VIL during power-up and power-down and recovery time of minimum
1µs is required before internal circuit gets ready for any command
sequences as shown in Figure 15.
---> WP pin provides hardware protection and is recommended to be
kept at VIL during power-up and power-down and recovery time of
minimum 10µs is required before internal circuit gets ready for any
command sequences as shown in Figure 15.
0.3 1. X16 TSOP1 pin is changed.
: #36 pin is changed from VccQ to N.C .
Feb. 15th 2002
0.4
1. In X16 device, bad block information location is changed from 256th
byte to 256th and 261th byte.
Apr. 15th 2002
2. tAR1, tAR2 are merged to tAR.(page 12)
(before revision) min. tAR1 = 20ns , min. tAR2 = 50ns
(after revision) min. tAR = 10ns
3. min. tCLR is changed from 50ns to 10ns.(page12)
4. min. tREA is changed from 35ns to 30ns.(page12)
5. min. tWC is changed from 50ns to 45ns.(page12)
6. Unique ID for Copyright Protection is available
-The device includes one block sized OTP(One Time Programmable),
which can be used to increase system security or to provide
identification capabilities. Detailed information can be obtained by
contact with Samsung.
7. tRHZ is divide into tRHZ and tOH.(page 12)
- tRHZ : RE High to Output Hi-Z
- tOH : RE High to Output Hold
8. tCHZ is divide into tCHZ and tOH.(page 12)
- tCHZ : CE High to Output Hi-Z
- tOH : CE High to Output Hold
Remark
Advance
Note : For more detailed features and specifications including FAQ, please refer to Samsung’s Flash web site.
http://www.intl.samsungsemi.com/Memory/Flash/datasheets.html
The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right
to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have
any questions, please contact the SAMSUNG branch office near you.
1

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