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Numéro de référence | K9F5608Q0C-D | ||
Description | 32M x 8 Bit / 16M x 16 Bit NAND Flash Memory | ||
Fabricant | Samsung semiconductor | ||
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ELECTRONICS
March. 2003
San 16 Banwol-Ri
Taean-Eup Hwasung- City
Kyungki Do, Korea
Tel.) 82 - 31 - 208 - 6463
Fax.) 82 - 31 -208 - 6799
512Mb/256Mb 1.8V NAND Flash Errata
Description : Some of AC characteristics are not meeting the specification.
> AC characteristics : Refer to Table
Affected Products : K9F1208Q0A-XXB0, K9F1216Q0A-XXB0
K9F5608Q0C-XXB0, K9F5616Q0C-XXB0
K9K1208Q0C-XXB0, K9K1216Q0C-XXB0
Improvement schedule : The components without this restriction will
be available from work week 23 or after.
Workaround : Relax the relevant timing parameters according to the table.
Table
UNIT : ns
Parameters
tWC tWH tWP tRC tREH tRP tREA tCEA
Specification
45 15 25 50 15 25 30 45
Relaxed Condition 80 20 60 80 20 60 60 75
Sincerely,
Product Planning & Application Eng.
Memory Division
Samsung Electronics Co.
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Pages | Pages 39 | ||
Télécharger | [ K9F5608Q0C-D ] |
No | Description détaillée | Fabricant |
K9F5608Q0C-D | 32M x 8 Bit / 16M x 16 Bit NAND Flash Memory | Samsung semiconductor |
K9F5608Q0C-DCB0 | 512Mb/256Mb 1.8V NAND Flash Errata | Samsung semiconductor |
K9F5608Q0C-DIB0 | 512Mb/256Mb 1.8V NAND Flash Errata | Samsung semiconductor |
K9F5608Q0C-H | 32M x 8 Bit / 16M x 16 Bit NAND Flash Memory | Samsung semiconductor |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
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