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K9F2808Q0B-D fiches techniques PDF

Samsung semiconductor - 16M x 8 Bit NAND Flash Memory

Numéro de référence K9F2808Q0B-D
Description 16M x 8 Bit NAND Flash Memory
Fabricant Samsung semiconductor 
Logo Samsung semiconductor 





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K9F2808Q0B-D fiche technique
K9F2808Q0B-DCB0,DIB0 K9F2808U0B-YCB0,YIB0
K9F2808U0B-VCB0,VIB0 K9F2808U0B-DCB0,DIB0
Document Title
16M x 8 Bit NAND Flash Memory
FLASH MEMORY
Revision History
Revision No. History
0.0 Initial issue.
Draft Date
May 28’th 2001
0.1 K9F2808U0B(3.3V device)’s qualification is finished
Jun. 30th 2001
0.2 K9F2808Q0B (1.8V device)
- Changed typical read operation current (Icc1) from 8mA to 5mA
Jul. 30th 2001
- Changed typical program operation current (Icc2) from 8mA to 5mA
- Changed typical erase operation current (Icc3) from 8mA to 5mA
- Changed typical program time(tPROG) from 200us to 300us
- Changed ALE to RE Delay (ID read, tAR1) from 100ns to 20ns
- Changed CLE hold time(tCLH) from 10ns to 15ns
- Changed CE hold time(tCH) from 10ns to 15ns
- Changed ALE hold time(tALH) from 10ns to 15ns
- Changed Data hold time(tDH) from 10ns to 15ns
- Changed CE Access time(tCEA) from 45ns to 60ns
- Changed Read cycle time(tRC) from 50ns to 70ns
- Changed Write Cycle time(tWC) from 50ns to 70ns
- Changed RE Access time(tREA) from 35ns to 40ns
- Changed RE High Hold time(tREH) from 15ns to 20ns
- Changed WE High Hold time(tWH) from 15ns to 20ns
0.3 1. Device Code is changed
- TBGA package information : ’B’ --> ’D’
ex) K9F2808Q0B-BCB0 ,BIB0 --> K9F2808Q0B-DCB0,DIB0
K9F2808U0B-BCB0 ,BIB0 --> K9F2808Q0B-DCB0,DIB0
2. VIH ,VIL of K9F2808Q0B(1.8 device) is changed
Aug. 23th 2001
(before revision)
Input High Voltage
I/O pins
VccQ-0.4
VIH
Except I/O pins VCC-0.4
-
VccQ
VCC
Input Low Voltage,
All inputs
V IL
-
0 - 0.4
(after revision)
Input High Voltage
I/O pins
VccQ-0.4
VIH
Except I/O pins VCC-0.4
-
Input Low Voltage,
All inputs
V IL
-
-0.3 -
VccQ
+0.3
VCC
+0.3
0.4
Remark
Advance
K9F2808Q0B
: Preliminary
Note : For more detailed features and specifications including FAQ, please refer to Samsung’s Flash web site.
http://www.intl.samsungsemi.com/Memory/Flash/datasheets.html
The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right
to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have
any questions, please contact the SAMSUNG branch office near you.
1

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