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Numéro de référence | K9F1G08Q0M-YIB0 | ||
Description | 1Gb Gb 1.8V NAND Flash Errata | ||
Fabricant | Samsung semiconductor | ||
Logo | |||
ELECTRONICS
March. 2003
San 16 Banwol-Ri
Taean-Eup Hwasung- City
Kyungki Do, Korea
Tel.) 82 - 31 - 208 - 6463
Fax.) 82 - 31 -208 - 6799
1Gb 1.8V NAND Flash Errata
Description : Some of AC characteristics are not meeting the specification.
> AC characteristics : Refer to Table
Affected Products : K9F1G08Q0M-YCB0/YIB0, K9F1G16Q0M-YCB0/YIB0
K9K2G08Q0M-YCB0/YIB0, K9K2G16Q0M-YCB0/YIB0
Improvement schedule : The components targeted to meet the specification
is scheduled to be available by workweek 25 along
with the final specification values.
Workaround : Relax the relevant timing parameters according to the table.
Table
Parameters
tWC
Specification
45
Relaxed Condition 80
tWH
15
20
tWP
25
60
UNIT : ns
tRC tREH tRP tREA tCEA
50 15 25 30 45
80 20 60 60 75
Sincerely,
Product Planning & Application Eng.
Memory Division
Samsung Electronics Co.
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Pages | Pages 38 | ||
Télécharger | [ K9F1G08Q0M-YIB0 ] |
No | Description détaillée | Fabricant |
K9F1G08Q0M-YIB0 | 1Gb Gb 1.8V NAND Flash Errata | Samsung semiconductor |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
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