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PDF K9F1208Q0B Data sheet ( Hoja de datos )
| Número de pieza | K9F1208Q0B | |
| Descripción | 64M x 8 Bit NAND Flash Memory | |
| Fabricantes | Samsung semiconductor | |
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ELECTRONICS
March. 2003
San 16 Banwol-Ri
Taean-Eup Hwasung- City
Kyungki Do, Korea
Tel.) 82 - 31 - 208 - 6463
Fax.) 82 - 31 -208 - 6799
512Mb/256Mb 1.8V NAND Flash Errata
Description : Some of AC characteristics are not meeting the specification.
> AC characteristics : Refer to Table
Affected Products : K9F1208Q0A-XXB0, K9F1216Q0A-XXB0
K9F5608Q0C-XXB0, K9F5616Q0C-XXB0
K9K1208Q0C-XXB0, K9K1216Q0C-XXB0
Improvement schedule : The components without this restriction will
be available from work week 23 or after.
Workaround : Relax the relevant timing parameters according to the table.
Table
UNIT : ns
Parameters
tWC tWH tWP tRC tREH tRP tREA tCEA
Specification
45 15 25 50 15 25 30 45
Relaxed Condition 80 20 60 80 20 60 60 75
Sincerely,
Product Planning & Application Eng.
Memory Division
Samsung Electronics Co.
1
1 page  
K9F1208U0A-VCB0,VIB0,FCB0,FIB0
K9F1208Q0A-DCB0,DIB0,HCB0,HIB0
K9F1208U0A-YCB0,YIB0,PCB0,PIB0
K9F1208U0A-DCB0,DIB0,HCB0,HIB0
K9F1216Q0A-DCB0,DIB0,HCB0,HIB0
K9F1216U0A-YCB0,YIB0,PCB0,PIB0
K9F1216U0A-DCB0,DIB0,HCB0,HIB0
FLASH MEMORY
PIN CONFIGURATION (TBGA)
K9F12XXX0A-DCB0,HCB0/DIB0,HIB0
X8
X16
12 3 4 5 6
12 3 4 5 6
N.C N.C
N.C N.C
A N.C
B
C
D
E
F
G
H
N.C N.C
/WP ALE Vss /CE /WE R/B
NC /RE CLE NC NC NC
NC NC NC NC NC NC
NC NC NC NC NC NC
NC NC NC NC NC NC
NC I/O0 NC NC NC Vcc
NC I/O1 NC VccQ I/O5 I/O7
Vss I/O2 I/O3 I/O4 I/O6 Vss
N.C N.C
N.C N.C
N.C N.C
N.C N.C
N.C N.C
N.C N.C
N.C
A
B
C
D
E
F
G
H
N.C N.C
/WP ALE Vss /CE /WE R/B
NC /RE CLE NC NC NC
NC NC NC NC NC NC
NC NC NC NC NC NC
NC NC NC I/O5 I/O7 NC
I/O8 I/O1 I/O10 I/O12 IO14 Vcc
I/O0 I/O9 I/O3 VccQ I/O6 I/O15
Vss I/O2 I/O11 I/O4 I/O13 Vss
N.C N.C
N.C N.C
N.C N.C
N.C N.C
Top View
Top View
4
5 Page 
K9F1208U0A-VCB0,VIB0,FCB0,FIB0
K9F1208Q0A-DCB0,DIB0,HCB0,HIB0
K9F1208U0A-YCB0,YIB0,PCB0,PIB0
K9F1208U0A-DCB0,DIB0,HCB0,HIB0
K9F1216Q0A-DCB0,DIB0,HCB0,HIB0
K9F1216U0A-YCB0,YIB0,PCB0,PIB0
K9F1216U0A-DCB0,DIB0,HCB0,HIB0
FLASH MEMORY
Product Introduction
The K9F1208X0A is a 528Mbit(553,648,218 bit) memory organized as 131,072 rows(pages) by 528 columns. Spare sixteen columns
are located from column address of 512 to 527. A 528-byte data register is connected to memory cell arrays accommodating data
transfer between the I/O buffers and memory during page read and page program operations. The memory array is made up of 16
cells that are serially connected to form a NAND structure. Each of the 16 cells resides in a different page. A block consists of two
NAND structures. A NAND structure consists of 16 cells. Total 16896 NAND cells reside in a block. The array organization is shown
in Figure 2. The program and read operations are executed on a page basis, while the erase operation is executed on a block basis.
The memory array consists of 4,096 separately erasable 16K-byte blocks. It indicates that the bit by bit erase operation is prohibited
on the K9F1208X0A.
The K9F1208X0A has addresses multiplexed into 8 I/O's. This scheme dramatically reduces pin counts and allows systems upgrades
to future densities by maintaining consistency in system board design. Command, address and data are all written through I/O's by
bringing WE to low while CE is low. Data is latched on the rising edge of WE. Command Latch Enable(CLE) and Address Latch
Enable(ALE) are used to multiplex command and address respectively, via the I/O pins. The 64M byte physical space requires 26
addresses, thereby requiring four cycles for byte-level addressing: column address, low row address and high row address, in that
order. Page Read and Page Program need the same four address cycles following the required command input. In Block Erase oper-
ation, however, only the three row address cycles are used. Device operations are selected by writing specific commands into the
command register. Table 1 defines the specific commands of the K9F1208X0A.
The device provides simultaneous program/erase capability up to four pages/blocks. By dividing the memory array into four 128Mbit
separate planes, simultaneous multi-plane operation dramatically increases program/erase performance by 4X while still maintaining
the conventional 512 byte(X8 device) or 256 word(X16 device) structure.
The extended pass/fail status for multi-plane program/erase allows system software to quickly identify the failing page/block out of
selected multiple pages/blocks. Usage of multi-plane operations will be described further throughout this document.
In addition to the enhanced architecture and interface, the device incorporates copy-back program feature from one page to another
of the same plane without the need for transporting the data to and from the external buffer memory. Since the time-consuming burst-
reading and data-input cycles are removed, system performance for solid-state disk application is significantly increased.
The device includes one block sized OTP(One Time Programmable), which can be used to increase system security or to provide
identification capabilities. Detailed information can be obtained by contact with Samsung.
Table 1. Command Sets
Function
Read 1
Read 2
Read ID
Reset
Page Program (True)(2)
Page Program (Dummy)(2)
Copy-Back Program(True)(2)
Copy-Back Program(Dummy)(2)
Block Erase
Multi-Plane Block Erase
Read Status
Read Multi-Plane Status
1st. Cycle
00h/01h(1)
50h
90h
FFh
80h
80h
00h
03h
60h
60h----60h
70h
71h(3)
2nd. Cycle
-
-
-
-
10h
11h
8Ah
8Ah
D0h
D0h
-
-
3rd. Cycle
-
-
-
-
-
-
10h
11h
-
-
-
-
Acceptable Command
during Busy
O
O
O
NOTE : 1. The 00h command defines starting address of the 1st half of registers.
The 01h command defines starting address of the 2nd half of registers.
After data access on the 2nd half of register by the 01h command, the status pointer is
automatically moved to the 1st half register(00h) on the next cycle.
2. Page Program(True) and Copy-Back Program(True) are available on 1 plane operation.
Page Program(Dummy) and Copy-Back Program(Dummy) are available on the 2nd,3rd,4th plane of multi plane operation.
3. The 71h command should be used for read status of Multi Plane operation.
Caution : Any undefined command inputs are prohibited except for above command set of Table 1.
10
11 Page | ||
| Páginas | Total 30 Páginas | |
| PDF Descargar | [ Datasheet K9F1208Q0B.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| K9F1208Q0A | 512Mb/256Mb 1.8V NAND Flash Errata | Samsung semiconductor |
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