Datasheet K7R643682M-PDF.HTML Equivalent ( PDF )

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Número de pieza

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K7R Datasheet ( Hoja de datos ) - resultados coincidentes

N.º	Número de pieza	Descripción	Fabricantes	Catagory
1	K7R161884B	512Kx36 & 1Mx18 QDR II b4 SRAM K7R163684B K7R161884B Document Title 512Kx36 & 1Mx18 QDRTM II b4 SRAM 512Kx36-bit,1Mx18-bit QDRTM II b4 SRAM Revision History Rev. No. 0.0 0.1 History 1. Initial document. 1. Change the Boundary scan exit order. 2. Correct the Overshoot and Undershoot timing diagram. 1. Change JTAG Block diagram	Samsung semiconductor	ram
2	K7R161884B-FC16	512Kx36 & 1Mx18 QDR II b4 SRAM K7R163684B K7R161884B Document Title 512Kx36 & 1Mx18 QDRTM II b4 SRAM 512Kx36-bit,1Mx18-bit QDRTM II b4 SRAM Revision History Rev. No. 0.0 0.1 History 1. Initial document. 1. Change the Boundary scan exit order. 2. Correct the Overshoot and Undershoot timing diagram. 1. Change JTAG Block diagram	Samsung semiconductor	ram
3	K7R161884B-FC20	512Kx36 & 1Mx18 QDR II b4 SRAM K7R163684B K7R161884B Document Title 512Kx36 & 1Mx18 QDRTM II b4 SRAM 512Kx36-bit,1Mx18-bit QDRTM II b4 SRAM Revision History Rev. No. 0.0 0.1 History 1. Initial document. 1. Change the Boundary scan exit order. 2. Correct the Overshoot and Undershoot timing diagram. 1. Change JTAG Block diagram	Samsung semiconductor	ram
4	K7R161884B-FC25	512Kx36 & 1Mx18 QDR II b4 SRAM K7R163684B K7R161884B Document Title 512Kx36 & 1Mx18 QDRTM II b4 SRAM 512Kx36-bit,1Mx18-bit QDRTM II b4 SRAM Revision History Rev. No. 0.0 0.1 History 1. Initial document. 1. Change the Boundary scan exit order. 2. Correct the Overshoot and Undershoot timing diagram. 1. Change JTAG Block diagram	Samsung semiconductor	ram
5	K7R161884B-FC30	512Kx36 & 1Mx18 QDR II b4 SRAM K7R163684B K7R161884B Document Title 512Kx36 & 1Mx18 QDRTM II b4 SRAM 512Kx36-bit,1Mx18-bit QDRTM II b4 SRAM Revision History Rev. No. 0.0 0.1 History 1. Initial document. 1. Change the Boundary scan exit order. 2. Correct the Overshoot and Undershoot timing diagram. 1. Change JTAG Block diagram	Samsung semiconductor	ram
6	K7R163684B	512Kx36 & 1Mx18 QDR II b4 SRAM K7R163684B K7R161884B Document Title 512Kx36 & 1Mx18 QDRTM II b4 SRAM 512Kx36-bit,1Mx18-bit QDRTM II b4 SRAM Revision History Rev. No. 0.0 0.1 History 1. Initial document. 1. Change the Boundary scan exit order. 2. Correct the Overshoot and Undershoot timing diagram. 1. Change JTAG Block diagram	Samsung semiconductor	ram
7	K7R163684B-FC16	512Kx36 & 1Mx18 QDR II b4 SRAM K7R163684B K7R161884B Document Title 512Kx36 & 1Mx18 QDRTM II b4 SRAM 512Kx36-bit,1Mx18-bit QDRTM II b4 SRAM Revision History Rev. No. 0.0 0.1 History 1. Initial document. 1. Change the Boundary scan exit order. 2. Correct the Overshoot and Undershoot timing diagram. 1. Change JTAG Block diagram	Samsung semiconductor	ram

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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