DataSheetWiki


K7P403622B-HC16 fiches techniques PDF

Samsung semiconductor - 128Kx36 & 256Kx18 Synchronous Pipelined SRAM

Numéro de référence K7P403622B-HC16
Description 128Kx36 & 256Kx18 Synchronous Pipelined SRAM
Fabricant Samsung semiconductor 
Logo Samsung semiconductor 





1 Page

No Preview Available !





K7P403622B-HC16 fiche technique
K7P403622M
K7P401822M
128Kx36 & 256Kx18 SRAM
Document Title
128Kx36 & 256Kx18 Synchronous Pipelined SRAM
Revision History
Rev. No. History
Rev. 0.0
- Preliminary specification release
Rev. 0.1
- Change specification format.
No change was made in parameters.
Rev. 0.2
Rev. 1.0
- Updated IDD, ISB and Input High Level.
Updated tKHKL, tKLKH, tKHQX, tKHQX1 and AC Test Conditions.
For JTAG, updated Vendor Definition and added tSVCH/tCHSX.
- Final specification release
Draft Date Remark
Preliminary
April, 1997
Preliminary
Jan. 1998
Preliminary
Dec. 1998
Final
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-
tions, please contact the SAMSUNG branch office near your office, call or cortact Headquarters.
-1-
Dec. 1998
Rev 1.0

PagesPages 12
Télécharger [ K7P403622B-HC16 ]


Fiche technique recommandé

No Description détaillée Fabricant
K7P403622B-HC16 128Kx36 & 256Kx18 Synchronous Pipelined SRAM Samsung semiconductor
Samsung semiconductor

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche