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PDF K7I323682M Data sheet ( Hoja de datos )
| Número de pieza | K7I323682M | |
| Descripción | 1Mx36 & 2Mx18 DDRII CIO b2 SRAM | |
| Fabricantes | Samsung semiconductor | |
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K7I323682M
K7I321882M
1Mx36 & 2Mx18 DDRII CIO b2 SRAM
Document Title
1Mx36-bit, 2Mx18-bit DDRII CIO b2 SRAM
Revision History
Rev. No.
History
Draft Date
0.0 1. Initial document.
0.1 1. Pin name change from DLL to Doff.
2. Vddq range change from 1.5V to 1.5V~1.8V.
October, 22 2001
December, 12 2001
3. Update JTAG test conditions.
4. Reserved pin for high density name change from NC to Vss/SA
5. Delete AC test condition about Clock Input timing Reference Level
6. Delete clock description on page 2 and add HSTL I/O comment
0.2
1. Update current characteristics in DC electrical characteristics
July, 29. 2002
2. Change AC timing characteristics
3. Update JTAG instruction coding and diagrams
0.3 1. Add AC electrical characteristics.
2. Change AC timing characteristics.
Sep. 6. 2002
3. Change DC electrical characteristics(ISB1)
0.4 1. Change the data Setup/Hold time.
2. Change the Access Time.(tCHQV, tCHQX, etc.)
Oct. 7. 2002
3. Change the Clock Cycle Time.(MAX value of tKHKH)
4. Change the JTAG instruction coding.
0.5 1. Change the Boundary scan exit order.
2. Change the AC timing characteristics(-25, -20)
Dec. 16, 2002
3. Correct the Overshoot and Undershoot timing diagrams.
0.6 1. Correct the JTAG ID register definition
Mar. 20, 2003
2. Correct the AC timing parameter (delete the tKHKH Max value)
0.7 1. Change the Maximum Clock cycle time.
2. Correct the 165FBGA package ball size.
April. 4, 2003
0.8 1. Change the operating current parameter.
before after
Oct. 29, 2003
Icc(x36) -25 : 620
700
-20 : 520
600
-16 : 440
500
Icc(x18) -25 : 560
670
-20 : 470
570
-16 : 410
470
Icc(x 8 ) -25 : 540
650
-20 : 450
550
-16 : 390
450
Isb1 -25 : 200
230
-20 : 180
200
-16 : 160
190
1.0 1. Final spec release
2.0 1. Delete the x8 Org. part
2.1 1. Change the operating current parameter
before after
Isb1 -25 : 230
250
-20 : 200
230
-16 : 190
220
Oct. 31, 2003
Dec. 1, 2003
July. 27, 2004
Remark
Advance
Preliminary
Preliminary
Preliminary
Preliminary
Preliminary
Preliminary
Preliminary
Preliminary
Final
Final
Final
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
- 1 - July. 2004
Rev 2.1
1 page  
K7I323682M
K7I321882M
1Mx36 & 2Mx18 DDRII CIO b2 SRAM
GENERAL DESCRIPTION
The K7I323682M and K7I321882M are 37,748,736-bits DDR Common I/O
Synchronous Pipelined Burst SRAMs.
They are organized as 1,048,576 words by 36bits for K7I323682M and 2,097,152 words by 18 bits for K7I321882M .
Address, data inputs, and all control signals are synchronized to the input clock ( K or K ).
Normally data outputs are synchronized to output clocks ( C and C ), but when C and C are tied high,
the data outputs are synchronized to the input clocks ( K and K ).
Read data are referenced to echo clock ( CQ or CQ ) outputs.
Read address and write address are registered on rising edges of the input K clocks.
Common address bus is used to access address both for read and write operations.
The internal burst counter is fiexd to 2-bit sequential for both read and write operations.
Synchronous pipeline read and late write enable high speed operations.
Simple depth expansion is accomplished by using LD for port selection.
Byte write operation is supported with BW0 and BW1 ( BW2 and BW3) pins for x18 ( x36 ) device.
Nybble write operation is supported with NW0 and NW1 pins for x8 device.
IEEE 1149.1 serial boundary scan (JTAG) simplifies monitoriing package pads attachment status with system.
The K7I323682M and K7I321882M are implemented with SAMSUNG's high performance 6T CMOS technology
and is available in 165pin FBGA packages. Multiple power and ground pins minimize ground bounce.
Read Operations
Read cycles are initiated by initiating R/W as high at the rising edge of the positive input clock K.
Address is presented and stored in the read address register synchronized with K clock.
For 2-bit burst DDR operation, it will access two 36-bit, 18-bit or 8-bit data words with each read command.
The first pipelined data is transfered out of the device triggered by C clock following next K clock rising edge.
Next burst data is triggered by the rising edge of following C clock rising edge.
Continuous read operations are initated with K clock rising edge.
And pipelined data are transferred out of device on every rising edge of both C and C clocks.
In case C and C tied to high, output data are triggered by K and K insted of C and C.
When the LD is disabled after a read operation, the K7I323682M and K7I321882M will first complete
burst read operation before entering into deselect mode at the next K clock rising edge.
Then output drivers disabled automatically to high impedance state.
Echo clock operation
To assure the output tracibility, the SRAM provides the output Echo clock, pair of compliment clock CQ and CQ,
which are synchronized with internal data output.
Echo clocks run free during normal operation.
The Echo clock is triggered by internal output clock signal, and transfered to external through same structures
as output driver.
Power-Up/Power-Down Supply Voltage Sequencing
The following power-up supply voltage application is recommended: VSS, VDD, VDDQ, VREF, then VIN. VDD and VDDQ can be applied
simultaneously, as long as VDDQ does not exceed VDD by more than 0.5V during power-up. The following power-down supply voltage
removal sequence is recommended: VIN, VREF, VDDQ, VDD, VSS. VDD and VDDQ can be removed simultaneously, as long as VDDQ
does not exceed VDD by more than 0.5V during power-down.
- 5 - July. 2004
Rev 2.1
5 Page 
K7I323682M
K7I321882M
1Mx36 & 2Mx18 DDRII CIO b2 SRAM
AC TIMING CHARACTERISTICS(VDD=1.8V±0.1V, TA=0°C to +70°C)
PARAMETER
SYMBOL
Clock
Clock Cycle Time (K, K, C, C)
tKHKH
Clock Phase Jitter (K, K, C, C)
tKC var
Clock High Time (K, K, C, C)
tKHKL
Clock Low Time (K, K, C, C)
tKLKH
Clock to Clock (K↑ → K↑, C↑ → C↑)
tKHKH
Clock to data clock (K↑ → C↑, K↑→ C↑) tKHCH
DLL Lock Time (K, C)
tKC lock
K Static to DLL reset
tKC reset
Output Times
C, C High to Output Valid
tCHQV
C, C High to Output Hold
tCHQX
C, C High to Echo Clock Valid
tCHCQV
C, C High to Echo Clock Hold
tCHCQX
CQ, CQ High to Output Valid
tCQHQV
CQ, CQ High to Output Hold
tCQHQX
C, High to Output High-Z
tCHQZ
C, High to Output Low-Z
tCHQX1
Setup Times
Address valid to K rising edge
tAVKH
Control inputs valid to K rising edge
tIVKH
Data-in valid to K, K rising edge
tDVKH
Hold Times
K rising edge to address hold
tKHAX
K rising edge to control inputs hold
tKHIX
K, K rising edge to data-in hold
tKHDX
-25
MIN MAX
4.00
1.60
1.60
1.80
0.00
1024
30
6.30
0.20
1.80
-0.45
-0.45
-0.30
-0.45
0.45
0.45
0.30
0.45
0.50
0.50
0.35
0.50
0.50
0.35
-20
MIN MAX
5.00
2.00
2.00
2.20
0.00
1024
30
7.88
0.20
2.30
-0.45
-0.45
-0.35
-0.45
0.45
0.45
0.35
0.45
0.60
0.60
0.40
0.60
0.60
0.40
-16
UNITS NOTES
MIN MAX
6.00
2.40
2.40
2.70
0.00
1024
30
8.40
0.20
2.80
ns
ns
ns
ns
ns
ns
cycle
ns
5
6
0.50 ns
-0.50
ns
0.50 ns
-0.50
ns
0.40 ns
-0.40
ns
0.50 ns
-0.50
ns
3
3
3
3
0.70
0.70
0.50
ns
ns 2
ns
0.70
0.70
0.50
ns
ns
ns
Notes: 1. All address inputs must meet the specified setup and hold times for all latching clock edges.
2. Control signal are R and W.
In case of BW0,BW1 (BW2, BW3, also for x36) signal follow the data setup/hold times.
3. If C,C are tied high, K,K become the references for C,C timing parameters.
4. To avoid bus contention, at a given voltage and temperature tCHQX1 is bigger than tCHQZ.
The specs as shown do not imply bus contention beacuse tCHQX1 is a MIN parameter that is worst case at totally different test conditions
(0°C, 1.9V) than tCHQZ, which is a MAX parameter(worst case at 70°C, 1.7V)
It is not possible for two SRAMs on the same board to be at such different voltage and temperature.
5. Clock phase jitter is the variance from clock rising edge to the next expected clock rising edge.
6. Vdd slew rate must be less than 0.1V DC per 50 ns for DLL lock retention. DLL lock time begins once Vdd and input clock are stable.
- 11 -
July. 2004
Rev 2.1
11 Page | ||
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