DataSheetWiki


K7A801809B-QCI25 fiches techniques PDF

Samsung semiconductor - 256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM

Numéro de référence K7A801809B-QCI25
Description 256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM
Fabricant Samsung semiconductor 
Logo Samsung semiconductor 





1 Page

No Preview Available !





K7A801809B-QCI25 fiche technique
K7A803609B
K7A801809B
256Kx36 & 512Kx18 Synchronous SRAM
Document Title
256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM
Revision History
Rev. No.
0.0
0.1
0.2
0.3
1.0
2.0
2.1
3.0
History
Initial draft
1. Delete pass- through
1. Add x32 org part and industrial temperature part
1. change scan order(1) form 4T to 6T at 119BGA(x18)
1. Final spec release
2. Change ISB2 form 50mA to 60mA
Remove tCYC 225MHz(-22)
1. Delete 119BGA package
1. Remove x32 organization
2. Remove -20 speed bin
Draft Date
Remark
May. 18 . 2001 Preliminary
June. 26. 2001 Preliminary
Aug. 11. 2001 Preliminary
Aug. 28. 2001 Preliminary
Nov. 16. 2001 Final
April. 01. 2002 Final
April. 04. 2003 Final
Nov. 17. 2003 Final
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
- 1 - Nov. 2003
Rev 3.0

PagesPages 18
Télécharger [ K7A801809B-QCI25 ]


Fiche technique recommandé

No Description détaillée Fabricant
K7A801809B-QCI25 256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM Samsung semiconductor
Samsung semiconductor

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche