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PDF K6X8016T3B-TQ70 Data sheet ( Hoja de datos )
| Número de pieza | K6X8016T3B-TQ70 | |
| Descripción | 512Kx16 bit Low Power Full CMOS Static RAM | |
| Fabricantes | Samsung semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de K6X8016T3B-TQ70 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
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K6X8016T3B Family
Document Title
512Kx16 bit Low Power Full CMOS Static RAM
Revision History
Revision No. History
0.0 Initial draft
0.1 Revised
- Deleted 44-TSOP2-400R package type.
1.0 Finalized
- Changed ICC1 from 4mA to 3mA
- Changed ICC2 from 45mA to 30mA
- Changed ISB1(industrial) from 30µA to 15µA
- Changed ISB1(Automotive) from 40µA to 25µA
CMOS SRAM
Draft Date
October 31, 2002
Remark
Preliminary
December 11, 2002 Preliminary
September 16, 2003 Final
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and
products. SAMSUNG Electronics will answer to yourquestions about device. If you have any questions, please contact the SAMSUNG branch offices.
1 Revision 1.0
September 2003
1 page  
K6X8016T3B Family
CMOS SRAM
AC OPERATING CONDITIONS
TEST CONDITIONS(Test Load and Input/Output Reference)
Input pulse level: 0.4 to 2.2V
Input rising and falling time: 5ns
Input and output reference voltage:1.5V
Output load(see right): CL=100pF+1TTL
CL=50pF+1TTL
CL1)
1.Including scope and jig capacitance
AC CHARACTERISTICS (VCC=2.7~3.6V, Industrial product:TA=-40 to 85°C, Automotive product:TA=-40 to 125°C)
Parameter List
Read cycle time
Address access time
Chip select to output
Output enable to valid output
Chip select to low-Z output
Read
Output enable to low-Z output
LB, UB enable to low-Z output
Chip disable to high-Z output
Output Disable to High-Z Output
Output hold from address change
LB, UB valid to data output
UB, LB disable to high-Z output
Write cycle time
Chip select to end of write
Address set-up time
Address valid to end of write
Write
Write pulse width
Write recovery time
Write to output high-Z
Data to write time overlap
Data hold from write time
End write to output low-Z
LB, UB valid to end of write
1. Voltage range is 3.0V~3.6V for industrial product.
Symbol
tRC
tAA
tCO
tOE
tLZ
tOLZ
tBLZ
tHZ
tOHZ
tOH
tBA
tBHZ
tWC
tCW
tAS
tAW
tWP
tWR
tWHZ
tDW
tDH
tOW
tBW
Speed Bins
55ns1)
70ns
Min Max Min Max
55 - 70 -
- 55 - 70
- 55 - 70
- 25 - 35
10 - 10 -
5- 5 -
5- 5 -
0 20 0 25
0 20 0 25
10 - 10 -
- 25 - 35
0 20 0 25
55 - 70 -
45 - 60 -
0- 0 -
45 - 60 -
40 - 55 -
0- 0 -
0 20 0 25
20 - 30 -
0- 0 -
5- 5 -
45 - 60 -
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
DATA RETENTION CHARACTERISTICS
Item
Symbol
Test Condition
Vcc for data retention
VDR CS≥Vcc-0.2V
Data retention current
K6X8016T3B-F
IDR Vcc=1.5V, CS≥Vcc-0.2V
K6X8016T3B-Q
Data retention set-up time
Recovery time
tSDR
tRDR
See data retention waveform
Min Typ Max Unit
1.5 - 3.6 V
- -6
µA
- - 10
0- -
ms
5- -
5 Revision 1.0
September 2003
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet K6X8016T3B-TQ70.PDF ] | |
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