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Samsung semiconductor - 256Kx16 bit Low Power full CMOS Static RAM

Numéro de référence K6X4016C3F-TB70
Description 256Kx16 bit Low Power full CMOS Static RAM
Fabricant Samsung semiconductor 
Logo Samsung semiconductor 





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K6X4016C3F-TB70 fiche technique
K6X4016C3F Family
Document Title
256Kx16 bit Low Power full CMOS Static RAM
Revision History
Revision No. History
0.0 Initial draft
0.1 Revised
Added Commercial Product.
Deleted 44-TSOP2-400R Package Type.
1.0 Finalized
- Changed ICC from 10mA to 5mA
- Changed ICC1 from 10mA to 7mA
- Changed ICC2 from 50mA to 30mA
- Changed ISB from 3mA to 0.4mA
- Changed IDR(Commercial) from 15µA to 12µA
- Changed IDR(industrial) from 20µA to 12µA
- Changed IDR(Automotive) from 30µA to 25µA
CMOS SRAM
Draft Date
July 26, 2002
Remark
Preliminary
November 29, 2002 Preliminary
September 16, 2003 final
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.
1 Revision 1.0
September 2003

PagesPages 9
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