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K6X4008T1F-YQ70 fiches techniques PDF

Samsung semiconductor - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM

Numéro de référence K6X4008T1F-YQ70
Description 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
Fabricant Samsung semiconductor 
Logo Samsung semiconductor 





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K6X4008T1F-YQ70 fiche technique
K6X4008T1F Family
Document Title
512Kx8 bit Low Power and Low Voltage CMOS Static RAM
CMOS SRAM
Revision History
Revision No. History
0.0 Initial Draft
Draft Data
July 29, 2002
0.1 Revised
- Added 55ns product( Vcc = 3.0V~3.6V)
October 14, 2002
0.2 Revised
- Added Commercial product
December 2, 2002
0.21
Revised
March 26, 2003
- Errata correction : corrected commercial product family name from
K6X4008T1F-F to K6X4008T1F-B in PRODUCT FAMILY.
1.0 Finalized
- Changed ICC from 4mA to 2mA
- Changed ICC1 from 4mA to 3mA
- Changed ICC2 from 30mA to 25mA
- Changed ISB1(Commercial) from 15µA to 10µA
- Changed ISB1(industrial) from 20µA to 10µA
- Changed ISB1(Automotive) from 30µA to 20µA
- Changed IDR(Commercial) from 15µA to 10µA
- Changed IDR(industrial) from 20µA to 10µA
- Changed IDR(Automotive) from 30µA to 20µA
September 16, 2003
Remark
Preliminary
Preliminary
Preliminary
Preliminary
Final
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.
1 Revision 1.0
September 2003

PagesPages 9
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