K6X4008C1F-GB55 Datasheet PDF - Samsung semiconductor
| Part Number | K6X4008C1F-GB55 | |
| Description | 512Kx8 bit Low Power full CMOS Static RAM | |
| Manufacturers | Samsung semiconductor | |
| Logo |  |
|
|
There is a preview and K6X4008C1F-GB55 download ( pdf file ) link at the bottom of this page. Total 9 Pages | ||
Preview 1 page No Preview Available !
K6X4008C1F Family
Document Title
512Kx8 bit Low Power full CMOS Static RAM
Revision History
Revision No. History
0.0 Initial draft
0.1 Revised
- Added Commercial Product.
1.0 Finalized
- Added Lead Free 32-SOP-525 Product
- Changed ICC from 10mA to 5mA
- Changed ICC1 from 8mA to 7mA
- Changed ICC2 from 40mA to 30mA
- Changed ISB from 3mA to 0.4mA
- Changed IDR(Commercial) from 15µA to 12µA
- Changed IDR(industrial) from 20µA to 12µA
- Changed IDR(Automotive) from 30µA to 25µA
CMOS SRAM
Draft Date
July 30, 2002
Remark
Preliminary
November 30, 2002 Preliminary
September 16, 2003 Final
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.
1 Revision 1.0
September 2003
|
| |
 
K6X4008C1F Family
AC OPERATING CONDITIONS
TEST CONDITIONS (Test Load and Test Input/Output Reference)
Input pulse level: 0.8 to 2.4V
Input rising and falling time: 5ns
Input and output reference voltage: 1.5V
Output load (See right): CL=100pF+1TTL
CL=50pF+1TTL
CMOS SRAM
CL1)
1. Including scope and jig capacitance
AC CHARACTERISTICS
(Vcc=4.5~5.5V, Commercial product: TA=0 to 70°C, Industrial product: TA=-40 to 85°C, Automotive product: TA=-40 to 125°C)
Parameter List
Read
Write
Read cycle time
Address access time
Chip select to output
Output enable to valid output
Chip select to low-Z output
Output enable to low-Z output
Chip disable to high-Z output
Output disable to high-Z output
Output hold from address change
Write cycle time
Chip select to end of write
Address set-up time
Address valid to end of write
Write pulse width
Write recovery time
Write to output high-Z
Data to write time overlap
Data hold from write time
End write to output low-Z
Symbol
tRC
tAA
tCO
tOE
tLZ
tOLZ
tHZ
tOHZ
tOH
tWC
tCW
tAS
tAW
tWP
tWR
tWHZ
tDW
tDH
tOW
Speed Bins
55ns
70ns
Min Max Min Max
55 - 70 -
- 55 - 70
- 55 - 70
- 25 - 35
10 - 10 -
5-5 -
0 20 0 25
0 20 0 25
10 - 10 -
55 - 70 -
45 - 60 -
0-0 -
45 - 60 -
40 - 50 -
0-0 -
0 20 0 25
25 - 30 -
0-0 -
5-5 -
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
DATA RETENTION CHARACTERISTICS
Item
Vcc for data retention
Data retention current
Data retention set-up time
Recovery time
Symbol
Test Condition
VDR CS≥Vcc-0.2V
K6X4008C1F-B
IDR Vcc=3.0V, CS≥Vcc-0.2V K6X4008C1F-F
K6X4008C1F-Q
tSDR
tRDR
See data retention waveform
Min
2.0
-
0
5
Typ Max Unit
- 5.5 V
12
- 12 µA
25
--
ms
--
5 Revision 1.0
September 2003
Preview 5 Page |
Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for K6X4008C1F-GB55 electronic component. |
| Information | Total 9 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ K6X4008C1F-GB55.PDF Datasheet ] | |
Share Link :
Electronic Components Distributor
|
An electronic components distributor is a company that sources, stocks, and sells electronic components to manufacturers, engineers, and hobbyists. |
| SparkFun Electronics | Allied Electronics | DigiKey Electronics | Arrow Electronics |
| Mouser Electronics | Adafruit | Newark | Chip One Stop |
Featured Datasheets
| Part Number | Description | MFRS |
| K6X4008C1F-GB55 | The function is 512Kx8 bit Low Power full CMOS Static RAM. Samsung semiconductor | |
Semiconductors commonly used in industry:
1N4148 |
BAW56 |
1N5400 |
NE555 | | ||
Quick jump to:
K6X4
1N4
2N2
2SA
2SC
74H
BC
HCF
IRF
KA | ||