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K6X0808T1D-NF70 fiches techniques PDF

Samsung semiconductor - 32Kx8 bit Low Power CMOS Static RAM

Numéro de référence K6X0808T1D-NF70
Description 32Kx8 bit Low Power CMOS Static RAM
Fabricant Samsung semiconductor 
Logo Samsung semiconductor 





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K6X0808T1D-NF70 fiche technique
K6X0808T1D Family
Document Title
32Kx8 bit Low Power CMOS Static RAM
CMOS SRAM
Revision History
Revision No. History
0.0 Initial draft
0.1 revised
- errata : corrected 28-SOP-525 to 28-SOP-450 in pakage type
0.2 revised
- Added commercial product.
1.0 Finalized
- Changed ICC from 3mA to 2mA
- Changed ICC2 from 25mA to 20mA
- Changed ISB from 3mA to 0.4mA
- Changed ISB1 for K6X0808T1D-F from 10µA to 6µA
- Changed ISB1 for K6X0808T1D-F from 20µA to 10µA
- Changed IDR for K6X0808T1D-F 10µA to 6µA
- Changed IDR for K6X0808T1D-Q 20µA to 10µA
- Errata correction
Draft Data
October 09, 2002
November 08, 2002
Remark
Preliminary
Preliminary
March 27, 2003
Preliminary
December 16, 2003 Final
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserves the right to change the specifications and
products. SAMSUNG Electronics will answer to your questions. If you have any questions, please contact the SAMSUNG branch offices.
1 Revision 1.0
December 2003

PagesPages 9
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