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Samsung semiconductor - 32Kx8 bit Low Power CMOS Static RAM

Numéro de référence K6X0808C1D-GQ70
Description 32Kx8 bit Low Power CMOS Static RAM
Fabricant Samsung semiconductor 
Logo Samsung semiconductor 





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K6X0808C1D-GQ70 fiche technique
K6X0808C1D Family
Document Title
32Kx8 bit Low Power CMOS Static RAM
Revision History
Revision No. History
0.0 Initial draft
1.0 Finalized
- Changed ICC from 10mA to 5mA
- Changed ICC1 from 8mA to 7mA
- Changed ICC2 from 35mA to 25mA
- Changed ISB from 3mA to 0.4mA
- Changed IDR for K6X0808C1D-F 15µA to 10µA
- Changed IDR for K6X0808C1D-Q 25µA to 20µA
- Errata correction
CMOS SRAM
Draft Data
October 09, 2002
December 16, 2003
Remark
Preliminary
Final
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserves the right to change the specifications and
products. SAMSUNG Electronics will answer to your questions. If you have any questions, please contact the SAMSUNG branch offices.
1 Revision 1.0
December 2003

PagesPages 9
Télécharger [ K6X0808C1D-GQ70 ]


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