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K6T4016U3C-TB70 fiches techniques PDF

Samsung semiconductor - 256Kx16 bit Low Power and Low Voltage CMOS Static RAM

Numéro de référence K6T4016U3C-TB70
Description 256Kx16 bit Low Power and Low Voltage CMOS Static RAM
Fabricant Samsung semiconductor 
Logo Samsung semiconductor 





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K6T4016U3C-TB70 fiche technique
K6T4016V3C, K6T4016U3C Family
Document Title
256Kx16 bit Low Power and Low Voltage CMOS Static RAM
CMOS SRAM
Revision History
Revision No History
0.0 Initial draft
0.1 Revise
- Speed bin change
Commercial: 70/85ns to 70/85/100ns
Industrial: 85/100ns to 70/85/100ns
- DC Characteristics change
ICC: 5mA at read/write to 4mA at read
ICC1: 5mA to 6mA
ICC2: 50mA to 45mA
ISB: 0.5mA to 0.3mA
ISB1: 10µA to 15µA for commercial parts
0.11 Errata correction
1.0 Finalize
2.0 Revise
- Add K6T4016V3C-TB55 product
2.01
Revise
- Improved VOH(output high voltage) from 2.2V to 2.4V.
Draft Date
January 13, 1998
June 12, 1998
Remark
Advance
Preliminary
August 13, 1998
November 16, 1998
June 26, 2001
Final
Final
October 15, 2001
Final
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.
1 Revision 2.01
October 2001

PagesPages 9
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