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Samsung semiconductor - 512Kx8 bit Low Power CMOS Static RAM

Numéro de référence K6T4008C1B-DL70
Description 512Kx8 bit Low Power CMOS Static RAM
Fabricant Samsung semiconductor 
Logo Samsung semiconductor 





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K6T4008C1B-DL70 fiche technique
K6T4008C1B Family
Document Title
512Kx8 bit Low Power CMOS Static RAM
Revision History
Revision No. History
0.0 Initial Draft
0.1 Revise
- Changed Operating current by reticle revision
ICC at write : 35mA 45mA
ICC1 at read/write : 15/35mA 10/45mA
1.0 Finalize
- Changed Operating current
ICC1 at write : 45mA 40mA
ICC2; 90mA 80mA
- Change test load at 55ns : 100pF 50pF
2.0 Revise
- Change datasheet format
3.0 Revise
- Industrial product speed bin change:70/100ns 55/70ns
CMOS SRAM
Draft Date
December 7, 1996
Remark
Advance
March 6, 1997
Preliminary
October 9, 1997
Final
February 17, 1998 Final
September 8, 1998 Final
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.
1 Revision 3.0
September 1998

PagesPages 9
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