K6R4008V1D Datasheet PDF - Samsung semiconductor
| Part Number | K6R4008V1D | |
| Description | 512Kx8 Bit High Speed Static RAM(3.3V Operating). Operated at Commercial and Industrial Temperature Ranges. | |
| Manufacturers | Samsung semiconductor | |
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K6R4008V1D
Document Title
512Kx8 Bit High Speed Static RAM(3.3V Operating).
Operated at Commercial and Industrial Temperature Ranges.
Revision History
RevNo. History
Rev. 0.0 Initial release with Preliminary.
Rev. 0.1 Add Low Ver.
Rev. 0.2 Change Icc, Isb and Isb1
Item
8ns
ICC(Commercial)
10ns
12ns
15ns
8ns
ICC(Industrial)
10ns
12ns
15ns
ISB
ISB1(L-ver.)
Previous
110mA
90mA
80mA
70mA
130mA
115mA
100mA
85mA
30mA
0.5mA
Current
80mA
65mA
55mA
45mA
100mA
85mA
75mA
65mA
20mA
1.2mA
Rev. 0.3
Rev. 1.0
Rev. 2.0
1. Correct AC parameters : Read & Write Cycle mA
2. Delete Low Ver.
3. Delete Data Retention Characteristics
1. Delete 12ns,15ns speed bin.
2. Change Icc for Industrial mode.
Item
ICC(Industrial)
8ns
10ns
Previous
100mA
85mA
1. Add the Lead Free Package type.
Current
90mA
75mA
PRELIMINARY
CMOS SRAM
Draft Data
Remark
Aug. 20. 2001 Preliminary
Sep. 19. 2001 Preliminary
Nov. 3. 2001
Preliminary
Nov.23. 2001 Preliminary
Dec.18. 2001 Final
July. 26, 2004 Final
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
-1-
Rev. 2.0
July 2004
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K6R4008V1D
PRELIMINARY
CMOS SRAM
RECOMMENDED DC OPERATING CONDITIONS*(TA=0 to 70°C)
Parameter
Supply Voltage
Ground
Input High Voltage
Input Low Voltage
Symbol
VCC
VSS
VIH
VIL
Min
3.0
0
2.0
-0.3**
Typ
3.3
0
-
-
* The above parameters are also guaranteed at industrial temperature range.
** VIL(Min) = -2.0V a.c(Pulse Width ≤ 8ns) for I ≤ 20mA.
*** VIH(Max) = VCC + 2.0V a.c (Pulse Width ≤ 8ns) for I ≤ 20mA
Max
3.6
0
VCC+0.3***
0.8
Unit
V
V
V
V
DC AND OPERATING CHARACTERISTICS*(TA=0 to 70°C, Vcc=3.3±0.3V, unless otherwise specified)
Parameter
Input Leakage Current
Output Leakage Current
Operating Current
Symbol
ILI
ILO
ICC
Test Conditions
VIN=VSS to VCC
CS=VIH or OE=VIH or WE=VIL
VOUT=VSS to VCC
Min. Cycle, 100% Duty
CS=VIL, VIN=VIH or VIL, IOUT=0mA
Com.
Ind.
Standby Current
ISB Min. Cycle, CS=VIH
ISB1 f=0MHz, CS≥VCC-0.2V,
VIN≥VCC-0.2V or VIN≤0.2V
Output Low Voltage Level
VOL IOL=8mA
Output High Voltage Level VOH IOH=-4mA
8ns
10ns
8ns
10ns
Min Max Unit
-2 2 µA
-2 2 µA
- 80 mA
- 65
- 90
- 75
- 20 mA
-5
- 0.4
2.4 -
V
V
* The above parameters are also guaranteed at industrial temperature range.
CAPACITANCE*(TA=25°C, f=1.0MHz)
Item
Input/Output Capacitance
Input Capacitance
Symbol
CI/O
CIN
Test Conditions
VI/O=0V
VIN=0V
TYP
-
-
Max
8
6
Unit
pF
pF
* Capacitance is sampled and not 100% tested.
-5-
Rev. 2.0
July 2004
Preview 5 Page |
Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for K6R4008V1D electronic component. |
| Information | Total 10 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ K6R4008V1D.PDF Datasheet ] | |
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