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PDF K6R1008C1D Data sheet ( Hoja de datos )
| Número de pieza | K6R1008C1D | |
| Descripción | 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. | |
| Fabricantes | Samsung semiconductor | |
| Logotipo |  |
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K6R1016V1D
for AT&T
CMOS SRAM
Document Title
64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating)
Operated at Commercial and Industrial Temperature Ranges.
Revision History
Rev.No.
History
Rev. 0.0
Rev. 0.1
Rev. 0.2
Initial document.
Speed bin modify
Current modify
Rev. 1.0
1. Delete 12ns speed bin.
2. Change Icc for Industrial mode.
Item Previous
ICC(Industrial)
8ns
10ns
100mA
85mA
Rev. 2.0
1. Add tBA,tBLZ,tBHZ,tBW AC parematers.
Rev. 3.0
1. Correct read cycle timing diagram(2).
Current
90mA
75mA
Draft Data
May. 11. 2001
June. 18. 2001
September. 9. 2001
December. 18. 2001
Remark
Preliminary
Preliminary
Preliminary
Final
February. 14. 2002
June. 19. 2002
Final
Final
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any questions,
please contact the SAMSUNG branch office near your office, call or contact Headquarters.
-1-
Revision 3.0
June 2002
1 page  
K6R1016V1D
for AT&T
CMOS SRAM
DC AND OPERATING CHARACTERISTICS*(TA=0 to 70°C, Vcc=3.3±0.3V, unless otherwise specified)
Parameter
Input Leakage Current
Output Leakage Current
Operating Current
Symbol
ILI
ILO
ICC
Test Conditions
VIN=VSS to VCC
CS=VIH or OE=VIH or WE=VIL
VOUT=VSS to VCC
Min. Cycle, 100% Duty
CS=VIL, VIN=VIH or VIL, IOUT=0mA
Com.
Ind.
8ns
10ns
8ns
Min Max Unit
-2 2 µA
-2 2 µA
- 80 mA
- 65
- 90
Standby Current
ISB Min. Cycle, CS=VIH
ISB1 f=0MHz, CS≥VCC-0.2V,
VIN≥VCC-0.2V or VIN≤0.2V
Output Low Voltage Level
VOL IOL=8mA
Output High Voltage Level VOH IOH=-4mA
10ns - 75
- 20 mA
-5
- 0.4
2.4 -
V
V
* The above parameters are also guaranteed at industrial temperature range.
CAPACITANCE*(TA=25°C, f=1.0MHz)
Item
Input/Output Capacitance
Input Capacitance
Symbol
CI/O
CIN
* Capacitance is sampled and not 100% tested.
Test Conditions
VI/O=0V
VIN=0V
MIN
-
-
Max
8
6
Unit
pF
pF
AC CHARACTERISTICS(TA=0 to 70°C, Vcc=3.3V+0.3V/-0.15V, unless otherwise noted.)
TEST CONDITIONS*
Parameter
Input Pulse Levels
Input Rise and Fall Times
Input and Output timing Reference Levels
Output Loads
Value
0V to 3V
3ns
1.5V
See below
* The above test conditions are also applied at industrial temperature range.
Output Loads(A)
DOUT
ZO = 50Ω
RL = 50Ω
VL = 1.5V
30pF*
Output Loads(B)
for tHZ, tLZ, tWHZ, tOW, tOLZ & tOHZ
DOUT
353Ω
+3.3V
319Ω
5pF*
* Capacitive Load consists of all components of the
test environment.
-5-
* Including Scope and Jig Capacitance
Revision 3.0
June 2002
5 Page 
K6R1016V1D
PACKAGE DIMENSION
48 TAPE BALL GRID ARRAY(0.75mm ball pitch)
Top View
B
#A1
Side View
D
C
Min Typ Max
A - 0.75 -
B 5.90 6.00 6.10
B1 - 3.75 -
C 6.90 7.00 7.10
C1 - 5.25 -
D 0.40 0.45 0.50
E 0.80 0.90 1.00
E1 - 0.55 -
E2 0.30 0.35 0.40
Y-
- 0.08
for AT&T
CMOS SRAM
Unit: millimeters
Bottom View
B
B1
6
A
B
C
D
E
F
G
H
5 4 3 21
B/2
Detail A
A
Y
Notes.
1. Bump counts: 48(8 row x 6 column)
2. Bump pitch: (x,y)=(0.75 x 0.75)(typ.)
3. All tolerence are +/-0.050 unless
otherwise specified.
4. Typ: Typical
5. Y is coplanarity: 0.08(Max)
- 11
Revision 3.0
June 2002
11 Page | ||
| Páginas | Total 11 Páginas | |
| PDF Descargar | [ Datasheet K6R1008C1D.PDF ] | |
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