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K6R1008C1C-I10 fiches techniques PDF

Samsung semiconductor - 128Kx8 Bit High-Speed CMOS Static RAM(5V Operating). Operated at Commercial and Industrial Temperature Ranges.

Numéro de référence K6R1008C1C-I10
Description 128Kx8 Bit High-Speed CMOS Static RAM(5V Operating). Operated at Commercial and Industrial Temperature Ranges.
Fabricant Samsung semiconductor 
Logo Samsung semiconductor 





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K6R1008C1C-I10 fiche technique
PRELIMINARY
K6R1008C1C-C/C-L, K6R1008C1C-I/C-P
Document Title
128Kx8 Bit High-Speed CMOS Static RAM(5V Operating).
Operated at Commercial and Industrial Temperature Ranges.
CMOS SRAM
Revision History
Rev.No.
History
Rev. 0.0
Initial release with Preliminary.
Draft Data
Aug. 5. 1998
Remark
Preliminary
Rev. 1.0
Rev. 2.0
Release to Final Data Sheet.
1.1. Delete Preliminary.
2.2. Added Data Retention Characteristics.
Add 10ns part.
Mar. 3. 1999
Final
Mar. 3. 2000
Final
Rev. 3.0
Delete 20ns speed bin
Sep. 24. 2001
Final
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
-1-
Revision 3.0
September 2001

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