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K6F1616T6B-TF55 fiches techniques PDF

Samsung semiconductor - 1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM

Numéro de référence K6F1616T6B-TF55
Description 1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
Fabricant Samsung semiconductor 
Logo Samsung semiconductor 





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K6F1616T6B-TF55 fiche technique
K6F1616T6B Family
CMOS SRAM
Document Title
1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
Revision History
Revision No. History
0.0 Initial draft
0.1 Revised
- Changed Isb1(max.) from 25uA to 15uA
1.0 Finalized
- Added Package Type ’48-TBGA - 7.00x7.00’
Draft Date
May 21, 2003
June 17, 2003
Remark
Preliminary
Preliminary
August 13, 2003
Final
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.
1 Revision 1.0
August 2003

PagesPages 10
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