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PDF K6E0808C1C-15 Data sheet ( Hoja de datos )
| Número de pieza | K6E0808C1C-15 | |
| Descripción | 32Kx8 Bit High Speed CMOS Static RAM | |
| Fabricantes | Samsung semiconductor | |
| Logotipo |  |
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K6E0808C1C-C
PRELIMINARY
CMOS SRAM
Document Title
32Kx8 Bit High Speed Static RAM(5V Operating), Evolutionary Pin out.
Revision History
RevNo. History
Rev. 0.0 Initial release with Preliminary.
Rev. 1.0
Release to final Data Sheet.
1. Delete Preliminary
Rev. 2.0
Update A.C parameters
2.1. Updated A.C parameters
Items
Previous spec.
(12/15/20ns part)
Updated spec.
(12/15/20ns part)
tOE
- / 8/10ns
- / 7 /9 ns
tCW
- /12/ - ns
- /11/ - ns
tHZ
8/10/10ns
6/ 7/10ns
tOHZ
- / 8 / - ns
- / 7 / - ns
tDW
- / 9 / - ns
- / 8 / - ns
2.2. Add VOH1=3.95V with the test condition as Vcc=5V±5% at 25°C
Rev. 3.0
3.1. Add 28-TSOP1 Package.
3.2. Add L-version.
3.3. Add Data Rentention Characteristics.
Rev. 4.0
4.1. Delete DIP Package.
4.2. Delete L-version.
4.3. Delete Data Retention Characteristics and Waveform.
Draft Data
Apr. 1st, 1994
May 14th,1994
Remark
Preliminary
Final
Oct. 4th, 1994
Final
Feb. 22th, 1996 Final
Feb. 25th, 1998 Final
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
-1-
Rev 4.0
February 1998
1 page  
K6E0808C1C-C
WRITE CYCLE
Parameter
Write Cycle Time
Chip Select to End of Write
Address Setup Time
Address Valid to End of Write
Write Pulse Width(OE High)
Write Pulse Width(OE Low)
Write Recovery Time
Write to Output High-Z
Data to Write Time Overlap
Data Hold from Write Time
End Write to Output Low-Z
PRELIMINARY
CMOS SRAM
Symbol
tWC
tCW
tAS
tAW
tWP
tWP1
tWR
tWHZ
tDW
tDH
tOW
K6E0808C1C-12
Min Max
12 -
9-
0-
9-
9-
12 -
0-
06
7-
0-
0-
K6E0808C1C-15
Min Max
15 -
11 -
0-
12 -
12 -
15 -
0-
08
8-
0-
0-
K6E0808C1C-20
Min Max
20 -
13 -
0-
13 -
13 -
20 -
0-
08
10 -
0-
0-
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
TIMMING DIAGRAMS
TIMING WAVEFORM OF READ CYCLE(1) (Address Controlled, CS=OE=VIL, WE=VIH)
Address
Data Out
tOH
Previous Valid Data
tAA
tRC
Valid Data
TIMING WAVEFORM OF READ CYCLE(2) (WE=VIH)
Address
CS
OE
Data out
VCC
Current
ICC
ISB
tAA
tCO
tOE
tOLZ
tLZ(4,5)
tPU
50%
tRC
tHZ(3,4,5)
tOHZ
Valid Data
tOH
tPD
50%
-5-
Rev 4.0
February 1998
5 Page | ||
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| PDF Descargar | [ Datasheet K6E0808C1C-15.PDF ] | |
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