DataSheetWiki


K4S641633H-C fiches techniques PDF

Samsung semiconductor - 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA

Numéro de référence K4S641633H-C
Description 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
Fabricant Samsung semiconductor 
Logo Samsung semiconductor 





1 Page

No Preview Available !





K4S641633H-C fiche technique
K4S641633H - R(B)E/N/G/C/L/F
Mobile-SDRAM
1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
FEATURES
• 3.0V & 3.3V power supply.
• LVCMOS compatible with multiplexed address.
• Four banks operation.
• MRS cycle with address key programs.
-. CAS latency (1, 2 & 3).
-. Burst length (1, 2, 4, 8 & Full page).
-. Burst type (Sequential & Interleave).
• EMRS cycle with address key programs.
• All inputs are sampled at the positive going edge of the system
clock.
• Burst read single-bit write operation.
• Special Function Support.
-. PASR (Partial Array Self Refresh).
-. Internal TCSR (Temperature Compensated Self Refresh)
• DQM for masking.
• Auto refresh.
• 64ms refresh period (4K cycle).
• Commercial Temperature Operation (-25°C ~ 70°C).
• Extended Temperature Operation (-25°C ~ 85°C).
• 54Balls FBGA with 0.8mm ball pitch
( -RXXX : Leaded, -BXXX : Lead Free).
GENERAL DESCRIPTION
The K4S641633H is 67,108,864 bits synchronous high data
rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits,
fabricated with SAMSUNG’s high performance CMOS technol-
ogy. Synchronous design allows precise cycle control with the
use of system clock and I/O transactions are possible on every
clock cycle. Range of operating frequencies, programmable
burst lengths and programmable latencies allow the same
device to be useful for a variety of high bandwidth and high per-
formance memory system applications.
ORDERING INFORMATION
Part No.
K4S641633H-R(B)E/N/G/C/L/F75
Max Freq.
133MHz(CL=3)
K4S641633H-R(B)E/N/G/C/L/F1H
105MHz(CL=2)
K4S641633H-R(B)E/N/G/C/L/F1L
105MHz(CL=3)*1
- R(B)E/N/G : Normal / Low / Low Power, Extended Temperature(-25°C ~ 85°C)
- R(B)C/L/F : Normal / Low / Low Power, Commercial Temperature(-25°C ~ 70°C)
Interface
LVCMOS
Package
54 FBGA
Leaded (Lead Free)
NOTES :
1. In case of 40MHz Frequency, CL1 can be supported.
2. Samsung are not designed or manufactured for use in a device or system that is used under circumstance in which human life is potentially at stake.
Please contact to the memory marketing team in samsung electronics when considering the use of a product contained herein for any specific
purpose, such as medical, aerospace, nuclear, military, vehicular or undersea repeater use.
February 2004

PagesPages 12
Télécharger [ K4S641633H-C ]


Fiche technique recommandé

No Description détaillée Fabricant
K4S641633H-C 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA Samsung semiconductor
Samsung semiconductor
K4S641633H-F1H 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA Samsung semiconductor
Samsung semiconductor
K4S641633H-F1L 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA Samsung semiconductor
Samsung semiconductor
K4S641633H-F75 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA Samsung semiconductor
Samsung semiconductor

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche